通过In-Ga共掺杂和衬底工程研究ZnO薄膜的应力调控热电性能

IF 6.8 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Science: Advanced Materials and Devices Pub Date : 2025-09-12 DOI:10.1016/j.jsamd.2025.101001

Nhi Hoang Nguyen , Dung Van Hoang , Nhat Quang Minh Tran , Truong Huu Nguyen , Oanh Kieu Truong Le , Khanh Duy Nguyen , Vinh Cao Tran , Anh Tuan Thanh Pham

{"title":"通过In-Ga共掺杂和衬底工程研究ZnO薄膜的应力调控热电性能","authors":"Nhi Hoang Nguyen , Dung Van Hoang , Nhat Quang Minh Tran , Truong Huu Nguyen , Oanh Kieu Truong Le , Khanh Duy Nguyen , Vinh Cao Tran , Anh Tuan Thanh Pham","doi":"10.1016/j.jsamd.2025.101001","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, ZnO films co-doped with In and Ga (IGZO) were deposited on different substrates, including glass, fused quartz, single-crystalline Si(200), polycrystalline Al<sub>2</sub>O<sub>3</sub>, and c-plane sapphire, by using magnetron sputtering. Residual stress, arising from both substrate-induced lattice mismatch and defect modulation, correlates with thermoelectric behavior. As a result, the IGZO/Al<sub>2</sub>O<sub>3</sub> exhibits the highest power factor of 476.2 μWm<sup>−1</sup>K<sup>−2</sup> at 773 K. A correlation between stress and native point defects (zinc interstitial and oxygen vacancy) was identified, suggesting that defect-induced stress may be influenced by substrate selection. These findings indicate that combined stress and defect modulation could be a promising strategy for enhancing the thermoelectric performance of oxide films.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101001"},"PeriodicalIF":6.8000,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stress-regulated thermoelectric properties of ZnO films through In–Ga co-doping and substrate engineering\",\"authors\":\"Nhi Hoang Nguyen , Dung Van Hoang , Nhat Quang Minh Tran , Truong Huu Nguyen , Oanh Kieu Truong Le , Khanh Duy Nguyen , Vinh Cao Tran , Anh Tuan Thanh Pham\",\"doi\":\"10.1016/j.jsamd.2025.101001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Herein, ZnO films co-doped with In and Ga (IGZO) were deposited on different substrates, including glass, fused quartz, single-crystalline Si(200), polycrystalline Al<sub>2</sub>O<sub>3</sub>, and c-plane sapphire, by using magnetron sputtering. Residual stress, arising from both substrate-induced lattice mismatch and defect modulation, correlates with thermoelectric behavior. As a result, the IGZO/Al<sub>2</sub>O<sub>3</sub> exhibits the highest power factor of 476.2 μWm<sup>−1</sup>K<sup>−2</sup> at 773 K. A correlation between stress and native point defects (zinc interstitial and oxygen vacancy) was identified, suggesting that defect-induced stress may be influenced by substrate selection. These findings indicate that combined stress and defect modulation could be a promising strategy for enhancing the thermoelectric performance of oxide films.</div></div>\",\"PeriodicalId\":17219,\"journal\":{\"name\":\"Journal of Science: Advanced Materials and Devices\",\"volume\":\"10 4\",\"pages\":\"Article 101001\"},\"PeriodicalIF\":6.8000,\"publicationDate\":\"2025-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Science: Advanced Materials and Devices\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468217925001546\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science: Advanced Materials and Devices","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468217925001546","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

本文采用磁控溅射技术，在玻璃、熔融石英、单晶Si（200）、多晶Al2O3和c面蓝宝石等不同衬底上制备了共掺杂In和Ga （IGZO）的ZnO薄膜。由衬底引起的晶格失配和缺陷调制引起的残余应力与热电行为相关。结果表明，在773 K时，IGZO/Al2O3的功率因数最高，为476.2 μWm−1K−2。应力与原生点缺陷（锌间隙和氧空位）之间存在相关性，表明缺陷诱导的应力可能受到底物选择的影响。这些发现表明，结合应力和缺陷调制可能是提高氧化膜热电性能的一种有前途的策略。

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Stress-regulated thermoelectric properties of ZnO films through In–Ga co-doping and substrate engineering

Herein, ZnO films co-doped with In and Ga (IGZO) were deposited on different substrates, including glass, fused quartz, single-crystalline Si(200), polycrystalline Al₂O₃, and c-plane sapphire, by using magnetron sputtering. Residual stress, arising from both substrate-induced lattice mismatch and defect modulation, correlates with thermoelectric behavior. As a result, the IGZO/Al₂O₃ exhibits the highest power factor of 476.2 μWm⁻¹K⁻² at 773 K. A correlation between stress and native point defects (zinc interstitial and oxygen vacancy) was identified, suggesting that defect-induced stress may be influenced by substrate selection. These findings indicate that combined stress and defect modulation could be a promising strategy for enhancing the thermoelectric performance of oxide films.

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来源期刊

Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

11.90

自引率

2.50%

发文量

审稿时长

47 days

期刊介绍： In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.