Al3+取代超宽禁带CuAlX4 (X = Cl, Br)用于红外非线性光学

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
CrystEngComm Pub Date : 2025-08-28 DOI:10.1039/D5CE00573F
Sheng Lv, Liangcheng Song, Yanling Xu, Hongyan Cui, Chongqiang Zhu and Chunhui Yang
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引用次数: 0

摘要

开发具有超宽带隙(>4.0 eV)的高性能红外(IR)非线性光学(NLO)晶体对于推进激光技术至关重要,但实现宽带隙和强NLO响应之间的平衡仍然具有挑战性。本文报道了一种三价取代策略来设计类金刚石卤化物CuAlX4 (X = Cl, Br),同时实现了创纪录的宽带隙(CuAlCl4为4.25 eV, CuAlBr4为4.09 eV),高激光诱导损伤阈值(LIDT)值(分别为46.2 MW cm - 2和33.9 MW cm - 2)和竞争二次谐波产生(SHG)系数(分别为3.52 pm V - 1和7.12 pm V - 1在2.09 μm处)。结构表征和第一性原理计算表明,Al3+的引入引起了不对称[CuX4]四面体和阳离子空位,打破了反转对称性,增强了超极化率。增加价电子浓度和优化四面体排列的协同效应导致了优异的光学性能,包括宽透明度和i型相位匹配行为。这项工作证明了高价取代设计具有超宽带隙和强大NLO性能的DL卤化物的潜力,为红外光电应用提供了新的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Aliovalent Al3+ substituted ultra-wide bandgap CuAlX4 (X = Cl, Br) for infrared nonlinear optics

Aliovalent Al3+ substituted ultra-wide bandgap CuAlX4 (X = Cl, Br) for infrared nonlinear optics

The development of high-performance infrared (IR) nonlinear optical (NLO) crystals with ultra-wide bandgaps (>4.0 eV) is crucial for advancing laser technologies, yet achieving a balance between wide bandgaps and strong NLO responses remains challenging. A trivalent aliovalent substitution strategy is reported in this work to engineer diamond-like (DL) halides, CuAlX4 (X = Cl, Br), which simultaneously achieve record-wide bandgaps (4.25 eV for CuAlCl4 and 4.09 eV for CuAlBr4), high laser-induced damage threshold (LIDT) values (46.2 MW cm−2 and 33.9 MW cm−2, respectively), and competitive second-harmonic generation (SHG) coefficients (3.52 pm V−1 and 7.12 pm V−1 at 2.09 μm, respectively). Structural characterization and first-principles calculations reveal that the introduction of Al3+ induces asymmetric [CuX4] tetrahedra and cationic vacancies, breaking inversion symmetry and enhancing hyperpolarizability. The synergistic effects of increased valence electron concentration and optimized tetrahedral alignment result in exceptional optical properties, including broad transparency and type-I phase-matching behavior. This work demonstrates the potential of high-valence substitution for designing DL halides with ultra-wide bandgaps and robust NLO performance, offering new insights for IR optoelectronic applications.

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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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