Kang An , Mengsi Liu , Hua Yang , Zao Yi , Chaojun Tang , Juan Deng , Junqiao Wang , Boxun Li
{"title":"基于金字塔状结构Ti和InAs的高效宽带太阳能吸收体和热发射体","authors":"Kang An , Mengsi Liu , Hua Yang , Zao Yi , Chaojun Tang , Juan Deng , Junqiao Wang , Boxun Li","doi":"10.1016/j.physe.2025.116377","DOIUrl":null,"url":null,"abstract":"<div><div>This paper innovatively proposes a broadband solar absorber and thermal emitter with dual-function integration, achieving breakthroughs in the fields of photothermal conversion and high-temperature thermal emission through three core innovations. First, it integrates high-temperature-resistant metal titanium (Ti) and semiconductor indium arsenide (InAs) into a gradient-like pyramid structure for the first time—this design breaks the limitations of single-material systems (InAs has a narrow intrinsic absorption bandwidth, and pure Ti suffers from insufficient radiation stability). Second, a novel triple-resonance mechanism is developed to realize multi-scale light manipulation: Mie resonance at the pyramid apex enables high-efficiency absorption of ultraviolet-near-infrared (UV-NIR) light, Fabry-Perot cavities in the gaps trap mid-infrared light, and plasmonic-semiconductor coupling at the Ti/InAs interface achieves a 3–5-fold enhancement of the local electric field. Third, the symmetric structure ensures polarization independence and incident angle insensitivity, addressing the issue of performance degradation of traditional absorbers under oblique incidence. Finite Difference Time Domain (FDTD) simulations combined with preliminary experimental verification confirm the excellent performance of this design: the broadband average absorption rate in the 280–3000 nm range reaches 99.06 %, and the weighted average absorption efficiency under AM1.5 conditions is 99.02 % with a solar energy loss of only 0.98. It maintains high radiation efficiency at high temperatures: 97.15 % at 1000 K and 97.77 % at 1200 K (benefiting from the high-temperature stability of Ti (melting point: 1668 °C) and the enhanced high-temperature carrier excitation of InAs). Even when the incident angle increases from 0° to 60°, the weighted average absorption efficiency of transverse electric (TE) waves and transverse magnetic (TM) waves remains >91.05 %, outperforming similar symmetric structure. This study realizes the integration of ultra-broadband absorption, high-temperature stable emission, and angle/polarization insensitivity, providing a new paradigm for high-performance solar energy collection and photothermal conversion systems.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"175 ","pages":"Article 116377"},"PeriodicalIF":2.9000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient broadband solar absorber and thermal emitter based on Ti and InAs with pyramid-like structure\",\"authors\":\"Kang An , Mengsi Liu , Hua Yang , Zao Yi , Chaojun Tang , Juan Deng , Junqiao Wang , Boxun Li\",\"doi\":\"10.1016/j.physe.2025.116377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper innovatively proposes a broadband solar absorber and thermal emitter with dual-function integration, achieving breakthroughs in the fields of photothermal conversion and high-temperature thermal emission through three core innovations. First, it integrates high-temperature-resistant metal titanium (Ti) and semiconductor indium arsenide (InAs) into a gradient-like pyramid structure for the first time—this design breaks the limitations of single-material systems (InAs has a narrow intrinsic absorption bandwidth, and pure Ti suffers from insufficient radiation stability). Second, a novel triple-resonance mechanism is developed to realize multi-scale light manipulation: Mie resonance at the pyramid apex enables high-efficiency absorption of ultraviolet-near-infrared (UV-NIR) light, Fabry-Perot cavities in the gaps trap mid-infrared light, and plasmonic-semiconductor coupling at the Ti/InAs interface achieves a 3–5-fold enhancement of the local electric field. Third, the symmetric structure ensures polarization independence and incident angle insensitivity, addressing the issue of performance degradation of traditional absorbers under oblique incidence. Finite Difference Time Domain (FDTD) simulations combined with preliminary experimental verification confirm the excellent performance of this design: the broadband average absorption rate in the 280–3000 nm range reaches 99.06 %, and the weighted average absorption efficiency under AM1.5 conditions is 99.02 % with a solar energy loss of only 0.98. It maintains high radiation efficiency at high temperatures: 97.15 % at 1000 K and 97.77 % at 1200 K (benefiting from the high-temperature stability of Ti (melting point: 1668 °C) and the enhanced high-temperature carrier excitation of InAs). Even when the incident angle increases from 0° to 60°, the weighted average absorption efficiency of transverse electric (TE) waves and transverse magnetic (TM) waves remains >91.05 %, outperforming similar symmetric structure. This study realizes the integration of ultra-broadband absorption, high-temperature stable emission, and angle/polarization insensitivity, providing a new paradigm for high-performance solar energy collection and photothermal conversion systems.</div></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":\"175 \",\"pages\":\"Article 116377\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1386947725002073\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947725002073","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Efficient broadband solar absorber and thermal emitter based on Ti and InAs with pyramid-like structure
This paper innovatively proposes a broadband solar absorber and thermal emitter with dual-function integration, achieving breakthroughs in the fields of photothermal conversion and high-temperature thermal emission through three core innovations. First, it integrates high-temperature-resistant metal titanium (Ti) and semiconductor indium arsenide (InAs) into a gradient-like pyramid structure for the first time—this design breaks the limitations of single-material systems (InAs has a narrow intrinsic absorption bandwidth, and pure Ti suffers from insufficient radiation stability). Second, a novel triple-resonance mechanism is developed to realize multi-scale light manipulation: Mie resonance at the pyramid apex enables high-efficiency absorption of ultraviolet-near-infrared (UV-NIR) light, Fabry-Perot cavities in the gaps trap mid-infrared light, and plasmonic-semiconductor coupling at the Ti/InAs interface achieves a 3–5-fold enhancement of the local electric field. Third, the symmetric structure ensures polarization independence and incident angle insensitivity, addressing the issue of performance degradation of traditional absorbers under oblique incidence. Finite Difference Time Domain (FDTD) simulations combined with preliminary experimental verification confirm the excellent performance of this design: the broadband average absorption rate in the 280–3000 nm range reaches 99.06 %, and the weighted average absorption efficiency under AM1.5 conditions is 99.02 % with a solar energy loss of only 0.98. It maintains high radiation efficiency at high temperatures: 97.15 % at 1000 K and 97.77 % at 1200 K (benefiting from the high-temperature stability of Ti (melting point: 1668 °C) and the enhanced high-temperature carrier excitation of InAs). Even when the incident angle increases from 0° to 60°, the weighted average absorption efficiency of transverse electric (TE) waves and transverse magnetic (TM) waves remains >91.05 %, outperforming similar symmetric structure. This study realizes the integration of ultra-broadband absorption, high-temperature stable emission, and angle/polarization insensitivity, providing a new paradigm for high-performance solar energy collection and photothermal conversion systems.
期刊介绍:
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures