Using Integral Relations to Estimate Parameters of Microwave Resonator Plasma during the Formation of an Alloying Delta Layer in Diamond

The authors consider the possibility of combining TM and TE modes in a microwave plasma resonator for growing diamond with a p-type doped δ-layer (boron) and the minimum possible thickness in CVD. A model based on integral relations allows us to estimate the parameters of the emerging plasma ball, along with the position of the substrate carrying the diamond growth surface relative to the plasma ball, and the dependence of this position on the gas pressure, particularly the preference for the low pressure mode (not calculated in applied plasma packages) for better adhesion of the ball to the substrate.