Zhenghao Chen, Tatsuro Kishi, Shu Han, Kyosuke Kishida, Haruyuki Inui
{"title":"采用微柱压缩法研究了mu相化合物Fe7Ta6单晶的缺陷结构和室温变形","authors":"Zhenghao Chen, Tatsuro Kishi, Shu Han, Kyosuke Kishida, Haruyuki Inui","doi":"10.1016/j.actamat.2025.121552","DOIUrl":null,"url":null,"abstract":"<div><div>The deformation behavior of single crystals of the mu-phase compound Fe<sub>7</sub>Ta<sub>6</sub> has been investigated by micropillar compression at room temperature as a function of crystal orientation and specimen size. Grown-in planar defects have also been investigated to avoid the confusion of grown-in defects and those introduced by deformation. (0001)<2<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span><span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0> (basal <strong><em>a</em></strong>) slip is identified to be the dominant slip system operative at room temperature. The CRSS for basal <strong><em>a</em></strong> slip is as high as 1.24 GPa. Direct observation of the dislocation core indicates that basal <strong><em>a</em></strong> slip in Fe<sub>7</sub>Ta<sub>6</sub> of the mu-phase occurs by a synchroshear mechanism exclusively within the triple layers of the MgCu<sub>2</sub> (Laves-phase) block layer, so that one form of the MgCu<sub>2</sub> block layer is transformed into another (twin-related) by the passage of the leading synchro-Shockley partial dislocation. In addition to planar faults on the (0001) basal plane formed when a different form of the MgCu<sub>2</sub> block layer is incorporated in the [0001] stacking sequence (stacking faults and twins) and when a block layer either of the MgCu<sub>2</sub> or Zr<sub>4</sub>Al<sub>3</sub> type is inserted consecutively or deleted, planar faults on {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>02} and {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>} pyramidal planes are identified. These {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>02} and {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>} pyramidal faults are found, for the first time, to be introduced to accommodate lattice incompatibility generated by the introduction of an intergrowth fault on the (0001) basal plane.</div></div>","PeriodicalId":238,"journal":{"name":"Acta Materialia","volume":"301 ","pages":"Article 121552"},"PeriodicalIF":9.3000,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defect structures and room-temperature deformation of single crystals of the mu-phase compound Fe7Ta6 investigated by micropillar compression\",\"authors\":\"Zhenghao Chen, Tatsuro Kishi, Shu Han, Kyosuke Kishida, Haruyuki Inui\",\"doi\":\"10.1016/j.actamat.2025.121552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The deformation behavior of single crystals of the mu-phase compound Fe<sub>7</sub>Ta<sub>6</sub> has been investigated by micropillar compression at room temperature as a function of crystal orientation and specimen size. Grown-in planar defects have also been investigated to avoid the confusion of grown-in defects and those introduced by deformation. (0001)<2<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span><span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0> (basal <strong><em>a</em></strong>) slip is identified to be the dominant slip system operative at room temperature. The CRSS for basal <strong><em>a</em></strong> slip is as high as 1.24 GPa. Direct observation of the dislocation core indicates that basal <strong><em>a</em></strong> slip in Fe<sub>7</sub>Ta<sub>6</sub> of the mu-phase occurs by a synchroshear mechanism exclusively within the triple layers of the MgCu<sub>2</sub> (Laves-phase) block layer, so that one form of the MgCu<sub>2</sub> block layer is transformed into another (twin-related) by the passage of the leading synchro-Shockley partial dislocation. In addition to planar faults on the (0001) basal plane formed when a different form of the MgCu<sub>2</sub> block layer is incorporated in the [0001] stacking sequence (stacking faults and twins) and when a block layer either of the MgCu<sub>2</sub> or Zr<sub>4</sub>Al<sub>3</sub> type is inserted consecutively or deleted, planar faults on {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>02} and {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>} pyramidal planes are identified. These {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>02} and {1<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>0<span><math><mover><mrow><mn>1</mn></mrow><mo>‾</mo></mover></math></span>} pyramidal faults are found, for the first time, to be introduced to accommodate lattice incompatibility generated by the introduction of an intergrowth fault on the (0001) basal plane.</div></div>\",\"PeriodicalId\":238,\"journal\":{\"name\":\"Acta Materialia\",\"volume\":\"301 \",\"pages\":\"Article 121552\"},\"PeriodicalIF\":9.3000,\"publicationDate\":\"2025-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Acta Materialia\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1359645425008389\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359645425008389","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Defect structures and room-temperature deformation of single crystals of the mu-phase compound Fe7Ta6 investigated by micropillar compression
The deformation behavior of single crystals of the mu-phase compound Fe7Ta6 has been investigated by micropillar compression at room temperature as a function of crystal orientation and specimen size. Grown-in planar defects have also been investigated to avoid the confusion of grown-in defects and those introduced by deformation. (0001)<20> (basal a) slip is identified to be the dominant slip system operative at room temperature. The CRSS for basal a slip is as high as 1.24 GPa. Direct observation of the dislocation core indicates that basal a slip in Fe7Ta6 of the mu-phase occurs by a synchroshear mechanism exclusively within the triple layers of the MgCu2 (Laves-phase) block layer, so that one form of the MgCu2 block layer is transformed into another (twin-related) by the passage of the leading synchro-Shockley partial dislocation. In addition to planar faults on the (0001) basal plane formed when a different form of the MgCu2 block layer is incorporated in the [0001] stacking sequence (stacking faults and twins) and when a block layer either of the MgCu2 or Zr4Al3 type is inserted consecutively or deleted, planar faults on {102} and {10} pyramidal planes are identified. These {102} and {10} pyramidal faults are found, for the first time, to be introduced to accommodate lattice incompatibility generated by the introduction of an intergrowth fault on the (0001) basal plane.
期刊介绍:
Acta Materialia serves as a platform for publishing full-length, original papers and commissioned overviews that contribute to a profound understanding of the correlation between the processing, structure, and properties of inorganic materials. The journal seeks papers with high impact potential or those that significantly propel the field forward. The scope includes the atomic and molecular arrangements, chemical and electronic structures, and microstructure of materials, focusing on their mechanical or functional behavior across all length scales, including nanostructures.