In-depth analysis of the structural, optical, electrical, and magnetic properties of boron nanofibers made from crystalline semiconductors

The study reports on the structural, optical, electrical, and magnetic properties of crystalline semiconductor boron nanofibers (BNF) synthesized at temperatures of 950, 1050, and 1150 °C using the dual pulsed laser ablation (DPLA) method from bulk boron. This study aims to characterize and investigate the properties of the BNF using different analytical techniques. High-resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) revealed that the BNF had a width ranging from 5 to 100 nm and a length between 1 and 5 μm. Each BNF's ultraviolet–visible (UV–Vis) absorption spectra exhibited a distinct absorption peak at 290, 300, and 310 nm, respectively. Photoluminescence (PL) measurements of the BNF showed a strong peak at 447, 448, and 450 nm, corresponding to their emission peak. Tauc plot calculations indicated that each BNF displayed a direct transition, confirming their semiconductor nature with the increase in band gaps, compared to bulk boron with a band gap of 1.90 eV. The vibrating sample magnetometer (VSM) measurements revealed coercivity magnetic values of the BNF, making them useful for storage devices. The electrical conductivity of the BNF was measured, showing higher conductivity than boron powder due to enhanced in-plane electron transport. Fourier-transform infrared spectroscopy (FTIR) analysis indicated the presence of hydrides, oxides, hydroxides, and oxy-functional groups on each BNF for composite materials. Based on the results obtained from different parameters, the BNF prepared are suitable for various applications, such as electronics, hydrogen storage, tissue engineering, drug delivery systems, radiation shielding, and neutron capture therapy.