Weifu Cen , Xin He , Ping Zou , Bing Yao , Jiankai Ou , Lin Lyu , Yinye Yang , Chaogang Zhou
{"title":"PdBr 2电子结构和光学性质中应变相关函数的表征","authors":"Weifu Cen , Xin He , Ping Zou , Bing Yao , Jiankai Ou , Lin Lyu , Yinye Yang , Chaogang Zhou","doi":"10.1016/j.cplett.2025.142419","DOIUrl":null,"url":null,"abstract":"<div><div>PdBr<sub>2</sub> is a narrow band gap transition metal halide semiconductor with a van der Waals structure, its unique structure enables the construction of 3D, 2D and 1D structures, and excellent physical chemical properties. However, the structure and physical properties of PdBr<sub>2</sub> are significantly affected by the strain of crystal structure. In order to reveal the mechanism of its influence on the strain regulator, the electronic structure and optical properties of PdBr<sub>2</sub> are regulated by strain, in this paper. The results show that PdBr<sub>2</sub> is a <em>G-M</em> indirect band gap semiconductor in the strain range of −30 % ∼ 35 %. Because of the bottom of the conduction band and the top of the valence band are not distributed in the Brillouin zone in the strain range, the reason for the main factor causing the change of band gap is that the shallow energy level of the conduction band responds significantly to the strain. The fitting results show that there is a <span><math><msub><mi>E</mi><mi>g</mi></msub><mfenced><mi>ε</mi></mfenced><mo>=</mo><mi>a</mi><mo>+</mo><mi>bε</mi><mo>+</mo><mi>c</mi><msup><mi>ε</mi><mn>2</mn></msup><mo>+</mo><mi>d</mi><msup><mi>ε</mi><mn>3</mn></msup></math></span> function relationship between the bandgap and strain of PdBr<sub>2</sub>, and it can be used to control the electronic structure and optical properties of PdBr<sub>2</sub>. State density shows that the electron transition of Pd-4<em>d</em> and Br-4<em>p</em> is significantly affected by strain. These electron transition determines the band gap of PdBr<sub>2</sub>, which is the main reason why the band gap changes with strain. The changes of the real part of the dielectric function, refractive index, reflection spectrum and electron energy loss function with strain are similar to the change of band gap with strain. The imaginary part of dielectric function, absorption spectrum, extinction absorption, energy loss function and conductivity increase with the increase of compressive strain, and the performance is more significant in the high energy region. Under the tensile strain, these four optical properties decrease with the increase of strain, and are more significant in the low energy region. The results show that the optical properties of PdBr<sub>2</sub> can be regulated by effectively controlling the strain.</div></div>","PeriodicalId":273,"journal":{"name":"Chemical Physics Letters","volume":"880 ","pages":"Article 142419"},"PeriodicalIF":3.1000,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of the strain-correlation function in the electronic structure and optical properties of PdBr₂\",\"authors\":\"Weifu Cen , Xin He , Ping Zou , Bing Yao , Jiankai Ou , Lin Lyu , Yinye Yang , Chaogang Zhou\",\"doi\":\"10.1016/j.cplett.2025.142419\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>PdBr<sub>2</sub> is a narrow band gap transition metal halide semiconductor with a van der Waals structure, its unique structure enables the construction of 3D, 2D and 1D structures, and excellent physical chemical properties. However, the structure and physical properties of PdBr<sub>2</sub> are significantly affected by the strain of crystal structure. In order to reveal the mechanism of its influence on the strain regulator, the electronic structure and optical properties of PdBr<sub>2</sub> are regulated by strain, in this paper. The results show that PdBr<sub>2</sub> is a <em>G-M</em> indirect band gap semiconductor in the strain range of −30 % ∼ 35 %. Because of the bottom of the conduction band and the top of the valence band are not distributed in the Brillouin zone in the strain range, the reason for the main factor causing the change of band gap is that the shallow energy level of the conduction band responds significantly to the strain. The fitting results show that there is a <span><math><msub><mi>E</mi><mi>g</mi></msub><mfenced><mi>ε</mi></mfenced><mo>=</mo><mi>a</mi><mo>+</mo><mi>bε</mi><mo>+</mo><mi>c</mi><msup><mi>ε</mi><mn>2</mn></msup><mo>+</mo><mi>d</mi><msup><mi>ε</mi><mn>3</mn></msup></math></span> function relationship between the bandgap and strain of PdBr<sub>2</sub>, and it can be used to control the electronic structure and optical properties of PdBr<sub>2</sub>. State density shows that the electron transition of Pd-4<em>d</em> and Br-4<em>p</em> is significantly affected by strain. These electron transition determines the band gap of PdBr<sub>2</sub>, which is the main reason why the band gap changes with strain. The changes of the real part of the dielectric function, refractive index, reflection spectrum and electron energy loss function with strain are similar to the change of band gap with strain. The imaginary part of dielectric function, absorption spectrum, extinction absorption, energy loss function and conductivity increase with the increase of compressive strain, and the performance is more significant in the high energy region. Under the tensile strain, these four optical properties decrease with the increase of strain, and are more significant in the low energy region. The results show that the optical properties of PdBr<sub>2</sub> can be regulated by effectively controlling the strain.</div></div>\",\"PeriodicalId\":273,\"journal\":{\"name\":\"Chemical Physics Letters\",\"volume\":\"880 \",\"pages\":\"Article 142419\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Physics Letters\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0009261425005615\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Physics Letters","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0009261425005615","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Characterization of the strain-correlation function in the electronic structure and optical properties of PdBr₂
PdBr2 is a narrow band gap transition metal halide semiconductor with a van der Waals structure, its unique structure enables the construction of 3D, 2D and 1D structures, and excellent physical chemical properties. However, the structure and physical properties of PdBr2 are significantly affected by the strain of crystal structure. In order to reveal the mechanism of its influence on the strain regulator, the electronic structure and optical properties of PdBr2 are regulated by strain, in this paper. The results show that PdBr2 is a G-M indirect band gap semiconductor in the strain range of −30 % ∼ 35 %. Because of the bottom of the conduction band and the top of the valence band are not distributed in the Brillouin zone in the strain range, the reason for the main factor causing the change of band gap is that the shallow energy level of the conduction band responds significantly to the strain. The fitting results show that there is a function relationship between the bandgap and strain of PdBr2, and it can be used to control the electronic structure and optical properties of PdBr2. State density shows that the electron transition of Pd-4d and Br-4p is significantly affected by strain. These electron transition determines the band gap of PdBr2, which is the main reason why the band gap changes with strain. The changes of the real part of the dielectric function, refractive index, reflection spectrum and electron energy loss function with strain are similar to the change of band gap with strain. The imaginary part of dielectric function, absorption spectrum, extinction absorption, energy loss function and conductivity increase with the increase of compressive strain, and the performance is more significant in the high energy region. Under the tensile strain, these four optical properties decrease with the increase of strain, and are more significant in the low energy region. The results show that the optical properties of PdBr2 can be regulated by effectively controlling the strain.
期刊介绍:
Chemical Physics Letters has an open access mirror journal, Chemical Physics Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Chemical Physics Letters publishes brief reports on molecules, interfaces, condensed phases, nanomaterials and nanostructures, polymers, biomolecular systems, and energy conversion and storage.
Criteria for publication are quality, urgency and impact. Further, experimental results reported in the journal have direct relevance for theory, and theoretical developments or non-routine computations relate directly to experiment. Manuscripts must satisfy these criteria and should not be minor extensions of previous work.