Giant linear magnetoresistance of self-doped SrTiO3

The oxides properties depend not only on their electronic structures but also critically on defects. Herein, we systematically investigate electron-doped SrTiO₃ single crystals via high temperature vacuum annealing. We observe an insulator-metal transition, attributed to oxygen vacancy introduction. Moreover, a distinct giant linear magnetoresistance (MR) observed at low temperatures originates from conductivity inhomogeneity. Crucially, the MR is further found to be proportional to carrier mobility. Our findings provide a strategy for achieving enhanced magnetoresistance through mobility optimization, which is helpful for advancing relevant applications in oxide-based electronic devices.