低功率长时间消融术治疗高阻抗左室顶点室早

IF 1.7 Q2 CARDIAC & CARDIOVASCULAR SYSTEMS

Journal of Arrhythmia Pub Date : 2025-09-11 DOI:10.1002/joa3.70185

Yutsuki Tsukagoshi, Keijiro Nakamura, Shoma Kitano, Naohiko Sahara, Hidehiko Hara

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引用次数: 0

摘要

低功率，长时间（LPLD）消融（≤25 W,≥60 s， 30 mL/min冲洗）通过室间前静脉应用于高阻抗（≥150 Ω）左心室顶点PVC部位。在严格的安全标准下，功率逐步升级（10w→12w→15w→18w）。计算机模拟表明，当温度为20 W时，损伤形成是安全的，而温度为30 W时，温度超过100°C，预测了蒸汽爆裂的风险。该方法获得了66.7%的急性成功率，无并发症，突出了LPLD作为具有挑战性的高阻抗冠状静脉消融部位的有前途的选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Low Power Long Duration Ablation for High Impedance Left Ventricular Summit PVCs

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Low Power Long Duration Ablation for High Impedance Left Ventricular Summit PVCs

Low-power, long-duration (LPLD) ablation (≤ 25 W for ≥ 60 s with 30 mL/min irrigation) was applied to high-impedance (≥ 150 Ω) left ventricular summit PVC sites via the anterior interventricular vein. Power was escalated stepwise (10 W → 12 W → 15 W → 18 W) under strict safety criteria. Computer simulations demonstrated safe lesion formation at 20 W, whereas 30 W exceeded 100°C, predicting steam-pop risk. This approach achieved 66.7% acute success without complications, highlighting LPLD as a promising option for challenging high-impedance coronary venous ablation sites.

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