Surface damage induced by oxidation in silicon wafer polishing: Mechanisms and mitigation strategies

Surface damage induced by oxidation is a critical challenge in silicon wafer thinning during advanced semiconductor manufacturing, as it directly affects the reliability and performance of devices. This study investigates the mechanisms underlying oxidation-induced surface damage during dry polishing of silicon wafers and proposes mitigation strategies. By integrating chemical etching, transmission electron microscopy (TEM), and Raman spectroscopy, we demonstrate that a nanoscale amorphous SiOx layer forms due to mechanochemical oxidation at higher feed speeds, resulting in significant surface damage and increased surface roughness. Nano-scratch testing confirms that this oxidation process, driven by high mechanical and chemical interaction during polishing, plays a dominant role in surface damage formation. Our findings reveal that reducing the feed speed effectively minimizes SiOx layer formation and promotes damage-free surfaces. This work provides a deeper understanding of surface oxidation mechanisms in silicon wafer polishing and offers practical guidance for optimizing processing parameters to improve surface quality and enhance reliability in semiconductor applications.