一种具有增强的抗dV / SW/dt噪声、负V / SW容忍度和导通dV / SW/dt控制的单片GaN功率IC

{"title":"一种具有增强的抗dV / SW/dt噪声、负V / SW容忍度和导通dV / SW/dt控制的单片GaN功率IC","authors":"Yifei Zheng, Haoran Wang, Boyu Li, Weimin Yuan, Qianheng Dong, Jing Zhu, Weifeng Sun, Long Zhang, Siyuan Yu, Denggui Wang, Jianjun Zhou","doi":"10.1109/jestpe.2025.3607276","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13093,"journal":{"name":"IEEE Journal of Emerging and Selected Topics in Power Electronics","volume":"32 1","pages":""},"PeriodicalIF":4.9000,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Monolithic GaN Power IC with Enhanced dV SW/dt Noise Immunity, Negative V SW Tolerance and Turn-on dV SW/dt Control\",\"authors\":\"Yifei Zheng, Haoran Wang, Boyu Li, Weimin Yuan, Qianheng Dong, Jing Zhu, Weifeng Sun, Long Zhang, Siyuan Yu, Denggui Wang, Jianjun Zhou\",\"doi\":\"10.1109/jestpe.2025.3607276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":13093,\"journal\":{\"name\":\"IEEE Journal of Emerging and Selected Topics in Power Electronics\",\"volume\":\"32 1\",\"pages\":\"\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2025-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Emerging and Selected Topics in Power Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/jestpe.2025.3607276\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Emerging and Selected Topics in Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/jestpe.2025.3607276","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}