Aleksei Almaev , Leonid Mochalov , Dmitry Almaev , Ekaterina Slapovskaya , Sergey Telegin , Bogdan Kushnarev , Pavel Yunin
{"title":"掺锌PECVD纳米晶Ga2O3薄膜的气敏性能","authors":"Aleksei Almaev , Leonid Mochalov , Dmitry Almaev , Ekaterina Slapovskaya , Sergey Telegin , Bogdan Kushnarev , Pavel Yunin","doi":"10.1016/j.rsurfi.2025.100633","DOIUrl":null,"url":null,"abstract":"<div><div>Nanocrystalline Ga<sub>2</sub>O<sub>3</sub> thin films doped by Zn (nc-ZGO) were synthesized by plasma-enhanced chemical vapor deposition. Their gas-sensitive properties have been comprehensively investigated. The thin films exhibit high response and operation speed under exposure to industry-relevant gases such as CO, H<sub>2</sub>, NH<sub>3</sub> and NO<sub>2</sub>. The highest responses are achieved under H<sub>2</sub> exposure. The responses to 500 ppm and 10<sup>4</sup> ppm of H<sub>2</sub> are 2.99 a. u. and 24.5 a. u., respectively, at the maximum response temperature of 500 °C. The sum of the response and recovery times do not exceed 27.4 s. The nc-ZGO thin films show only a weak drift of their gas-sensitive characteristics during long-term exposure to CO, H<sub>2</sub>, and NO<sub>2</sub> as well as and a weak dependence of the gas-sensitive characteristics on the humidity level in the 10–50 % relative humidity range. A mechanism of the sensing effect of nc-ZGO thin films is proposed within the current paradigm.</div></div>","PeriodicalId":21085,"journal":{"name":"Results in Surfaces and Interfaces","volume":"20 ","pages":"Article 100633"},"PeriodicalIF":0.0000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas-sensitive properties of PECVD nanocrystalline Ga2O3 thin films doped with Zn\",\"authors\":\"Aleksei Almaev , Leonid Mochalov , Dmitry Almaev , Ekaterina Slapovskaya , Sergey Telegin , Bogdan Kushnarev , Pavel Yunin\",\"doi\":\"10.1016/j.rsurfi.2025.100633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Nanocrystalline Ga<sub>2</sub>O<sub>3</sub> thin films doped by Zn (nc-ZGO) were synthesized by plasma-enhanced chemical vapor deposition. Their gas-sensitive properties have been comprehensively investigated. The thin films exhibit high response and operation speed under exposure to industry-relevant gases such as CO, H<sub>2</sub>, NH<sub>3</sub> and NO<sub>2</sub>. The highest responses are achieved under H<sub>2</sub> exposure. The responses to 500 ppm and 10<sup>4</sup> ppm of H<sub>2</sub> are 2.99 a. u. and 24.5 a. u., respectively, at the maximum response temperature of 500 °C. The sum of the response and recovery times do not exceed 27.4 s. The nc-ZGO thin films show only a weak drift of their gas-sensitive characteristics during long-term exposure to CO, H<sub>2</sub>, and NO<sub>2</sub> as well as and a weak dependence of the gas-sensitive characteristics on the humidity level in the 10–50 % relative humidity range. A mechanism of the sensing effect of nc-ZGO thin films is proposed within the current paradigm.</div></div>\",\"PeriodicalId\":21085,\"journal\":{\"name\":\"Results in Surfaces and Interfaces\",\"volume\":\"20 \",\"pages\":\"Article 100633\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Results in Surfaces and Interfaces\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S266684592500220X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Surfaces and Interfaces","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S266684592500220X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gas-sensitive properties of PECVD nanocrystalline Ga2O3 thin films doped with Zn
Nanocrystalline Ga2O3 thin films doped by Zn (nc-ZGO) were synthesized by plasma-enhanced chemical vapor deposition. Their gas-sensitive properties have been comprehensively investigated. The thin films exhibit high response and operation speed under exposure to industry-relevant gases such as CO, H2, NH3 and NO2. The highest responses are achieved under H2 exposure. The responses to 500 ppm and 104 ppm of H2 are 2.99 a. u. and 24.5 a. u., respectively, at the maximum response temperature of 500 °C. The sum of the response and recovery times do not exceed 27.4 s. The nc-ZGO thin films show only a weak drift of their gas-sensitive characteristics during long-term exposure to CO, H2, and NO2 as well as and a weak dependence of the gas-sensitive characteristics on the humidity level in the 10–50 % relative humidity range. A mechanism of the sensing effect of nc-ZGO thin films is proposed within the current paradigm.
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