CoFe2O4@g-C3N4纳米复合材料高效光催化降解靛蓝胭脂红染料

IF 6.8 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Osamah Aldaghri
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引用次数: 0

摘要

半导体光催化剂是有效控制废水污染和减少废水中有害有机污染物的潜在候选材料。本文研究了一种半导体纳米复合材料,用于光降解靛蓝胭脂红(IC)作为典型有机污染物。采用一种简单环保的方法,以茴香草提取物为还原封盖剂,以前驱体为原料合成钴铁氧体纳米颗粒(CoFe2O4),然后与石墨化碳氮化(g-C3N4)偶联,得到CoFe2O4@g-C3N4复合材料。x射线衍射分析证实了复合材料中两相的形成,CoFe2O4的平均晶粒尺寸(≈29 nm)。相比之下,通过EDS和XPS技术获得的化学成分显示了Co, Fe, O, C和n的存在,因此CoFe2O4@g-C3N4异质结构将间接带隙从2.82 eV减小到2.33 eV,从而提高了可见光吸收。发现纯CoFe纳米粒子的光学带隙为~ 3.20 eV,更直接,使表面积增加到≈59 cm2。克−1。测试了CoFe2O4、g-C3N4和CoFe2O4@g-C3N4在可见光照射下对IC的降解。纳米复合材料对IC的降解表现出优异的光催化性能,在60分钟内达到100%。CoFe2O4和g-C3N4在CoFe2O4@g-C3N4异质结构内的协同作用减小了能带隙,阻碍了电子/空穴对的复合,并通过形成活性自由基提高了电子和空穴的光降解活力,从而增强了染料的光降解能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient photocatalytic degradation of indigo carmine dye by CoFe2O4@g-C3N4 nanocomposite
Semiconductor-based photocatalysts are potential candidates for efficiently controlling pollution and reducing noxious organic contaminants from wastewater. The present research is devoted to fabricating a semiconducting nanocomposite material for the photodegradation of indigo carmine (IC) as a model organic pollutant. A facile eco-friendly method was adopted to synthesize cobalt ferrite nanoparticles (CoFe2O4) from their precursors using Pimpinella anisum extract as a reducing and capping agent and then coupled to graphitic carbon nitride (g-C3N4) to achieve CoFe2O4@g-C3N4 composite. X-ray diffraction analysis confirmed the formation of both phases in the composite, with a mean crystallite size (≈29 nm) for CoFe2O4. In contrast, the chemical composition obtained by EDS and XPS techniques revealed the presence of Co, Fe, O, C, and N. Consequently, the CoFe2O4@g-C3N4 heterostructure reduced the indirect band gap from 2.82 to 2.33 eV, thereby improving visible-light absorption. The optical band gap of pure CoFe nanoparticles was found to be ∼3.20 eV, which is more direct and increases the surface area to ≈59 cm2. g−1. The CoFe2O4, g-C3N4, and CoFe2O4@g-C3N4 were tested for the degradation of the IC under visible light illumination. The nanocomposite exhibits excellent photocatalytic performance towards the IC degradation, reaching 100 % within 60 min. The synergism of CoFe2O4 and g-C3N4 within the CoFe2O4@g-C3N4 heterostructure resulted in a lessened energy band gap, hindered electron/hole pair recombination, and improved both electrons and holes viability for the photodegradation through the formation of active radicals, and consequently an enhancement of dye photodegradation.
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来源期刊
Journal of Science: Advanced Materials and Devices
Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
11.90
自引率
2.50%
发文量
88
审稿时长
47 days
期刊介绍: In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.
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