过渡金属掺杂GaSb纳米片:高居里温度和自旋电子应用

IF 3.9 Q3 PHYSICS, CONDENSED MATTER
Narmin Ismayilova , Afsun Abiyev
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引用次数: 0

摘要

利用密度泛函理论,系统地研究了掺杂过渡金属(Cr、Mn、Fe、Co、V和Cu)的二维GaSb纳米片的磁性和电学特性。通过优化各种铁磁和反铁磁设计,找到了最稳定的磁态。虽然原始的GaSb纳米片具有1.78 eV的宽带隙,并且没有磁性,但过渡金属掺杂会导致结构畸变和局域磁矩。有趣的是,Cr, Fe和mn掺杂的GaSb纳米片表现出半金属铁磁性和全自旋极化,这使得它们对自旋电子应用很感兴趣。对于Fe, Cr和Mn掺杂体系,利用铁磁和无序局域矩组态之间的能量差计算的平均场近似计算出的居里温度(TC)远高于室温(RT)。这些结果突出了tm掺杂GaSb纳米片在未来低维自旋电子和纳米电子器件中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Transition metal-doped GaSb nanosheets: High curie temperature and spintronic applications

Transition metal-doped GaSb nanosheets: High curie temperature and spintronic applications
Using density functional theory, the magnetic and electrical characteristics of two-dimensional GaSb nanosheets doped with transition metals (Cr, Mn, Fe, Co, V, and Cu) were methodically investigated. The most stable magnetic states were found by optimizing a variety of ferromagnetic and antiferromagnetic designs. Although the pristine GaSb nanosheet has a wide bandgap of 1.78 eV and is not magnetic, transition metal doping causes structural distortions and localized magnetic moments. Interestingly, Cr-, Fe-, and Mn-doped GaSb nanosheets show half-metallic ferromagnetism and full spin polarization, which makes them interesting for spintronic applications. For Fe-, Cr- and Mn doped systems, the Curie temperature (TC), which is calculated using the mean-field approximation from the energy difference between ferromagnetic and disordered local moment configurations, is much higher than room temperature (RT). The potential of TM-doped GaSb nanosheets in upcoming low-dimensional spintronic and nanoelectronic devices is highlighted by these results.
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来源期刊
Computational Condensed Matter
Computational Condensed Matter PHYSICS, CONDENSED MATTER-
CiteScore
3.70
自引率
9.50%
发文量
134
审稿时长
39 days
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