改进了cr掺杂二维Bi2Te3的热电性能

Jun Beom Park, Rijan Karkee, Michael Thompson Pettes
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引用次数: 0

摘要

具有高导电性和低导热性的热电材料(如Bi2Te3)可以有效地将废热转化为电能。然而,尽管有良好的理论预测,单个的Bi2Te3纳米结构,如二维(2D)纳米板,往往表现不如块体Bi2Te3。我们报道了一种新的表面掺杂技术,利用外部Cr涂层,然后在还原气氛中进行热退火工艺,合成高n型Bi2Te3纳米板,以及这种表面涂层-只有几个原子或更少的厚度-可以明显影响二维Bi2Te3热电性能的机制。Cr原子作为n型载流子供体,在热退火过程中直接结合到Bi2Te3结构中,在室温下,电导率提高了~ 70 %,而导热率仅提高了~ 5 %。与未涂覆的Bi2Te3纳米板相比,掺铬的Bi2Te3纳米板表现出两倍的热电优值(zT),但仍然相对较低。拉曼光谱和化学势模拟进一步证实了Cr原子被纳入到Bi2Te3结构中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved thermoelectric performance in Cr-doped two-dimensional Bi2Te3
Thermoelectric materials with high electrical conductivity and low thermal conductivity (e.g., Bi2Te3) can efficiently convert waste heat into electricity. However, despite favorable theoretical predictions, individual Bi2Te3 nanostructures such as two-dimensional (2D) nanoplates tend to underperform bulk Bi2Te3. We report a novel surface doping technique to synthesize highly n-type Bi2Te3 nanoplates using an external Cr coating followed by a thermal annealing process in a reducing atmosphere, as well as the mechanism by which this surface coating – only a few atoms or less in thickness – can observably impact the thermoelectric performance of 2D Bi2Te3. The Cr atoms act as n-type carrier donors by directly incorporating into the Bi2Te3 structure during thermal annealing, enhancing electrical conductivity by ∼ 70 % while increasing thermal conductivity by only ∼ 5 % at room temperature. Compared to the uncoated Bi2Te3 nanoplate, the Cr-doped Bi2Te3 nanoplate exhibits a doubled thermoelectric figure of merit (zT), which is still relatively low. Raman spectroscopy and chemical potential simulations further confirm that Cr atoms are incorporated into the Bi2Te3 structure.
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