Dowook Kim, So Young Kim, Jun Sung Kim, Tae-Hwan Kim
{"title":"范德华双层中电场驱动的地下原子迁移\\(\\textrm{Ta}_{2}\\textrm{NiSe}_{5}\\)扫描隧道显微镜","authors":"Dowook Kim, So Young Kim, Jun Sung Kim, Tae-Hwan Kim","doi":"10.1007/s40042-025-01428-0","DOIUrl":null,"url":null,"abstract":"<div><p>We demonstrate that strong local electric fields generated by a scanning tunneling microscope (STM) tip induce nanoscale structural modifications beneath the surface of bilayer <span>\\(\\textrm{Ta}_{2}\\textrm{NiSe}_{5}\\)</span>. Applying voltage pulses with a positive sample bias leads to the formation of depressions at the pulse sites and protrusions at laterally displaced locations along the crystal’s chain direction. Bias-dependent STM imaging and scanning tunneling spectroscopy reveal no measurable change in the surface electronic structure, indicating that the observed height variations originate from structural, rather than electronic, effects. We propose that the electric field drives anisotropic atomic migration within the van der Waals gap, resulting in reversible and directional reconfiguration of subsurface layers. Sequential pulsing further confirms the dynamic nature of this process, allowing local depressions and protrusions to be erased or repositioned. Our findings introduce a mechanism for electric-field-induced subsurface patterning in layered materials, with potential applications in reconfigurable nanoscale devices in van der Waals materials.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 4","pages":"394 - 399"},"PeriodicalIF":0.9000,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric-field-driven subsurface atomic migration in van der Waals bilayer \\\\(\\\\textrm{Ta}_{2}\\\\textrm{NiSe}_{5}\\\\) via scanning tunneling microscopy\",\"authors\":\"Dowook Kim, So Young Kim, Jun Sung Kim, Tae-Hwan Kim\",\"doi\":\"10.1007/s40042-025-01428-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We demonstrate that strong local electric fields generated by a scanning tunneling microscope (STM) tip induce nanoscale structural modifications beneath the surface of bilayer <span>\\\\(\\\\textrm{Ta}_{2}\\\\textrm{NiSe}_{5}\\\\)</span>. Applying voltage pulses with a positive sample bias leads to the formation of depressions at the pulse sites and protrusions at laterally displaced locations along the crystal’s chain direction. Bias-dependent STM imaging and scanning tunneling spectroscopy reveal no measurable change in the surface electronic structure, indicating that the observed height variations originate from structural, rather than electronic, effects. We propose that the electric field drives anisotropic atomic migration within the van der Waals gap, resulting in reversible and directional reconfiguration of subsurface layers. Sequential pulsing further confirms the dynamic nature of this process, allowing local depressions and protrusions to be erased or repositioned. Our findings introduce a mechanism for electric-field-induced subsurface patterning in layered materials, with potential applications in reconfigurable nanoscale devices in van der Waals materials.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":\"87 4\",\"pages\":\"394 - 399\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-025-01428-0\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-025-01428-0","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Electric-field-driven subsurface atomic migration in van der Waals bilayer \(\textrm{Ta}_{2}\textrm{NiSe}_{5}\) via scanning tunneling microscopy
We demonstrate that strong local electric fields generated by a scanning tunneling microscope (STM) tip induce nanoscale structural modifications beneath the surface of bilayer \(\textrm{Ta}_{2}\textrm{NiSe}_{5}\). Applying voltage pulses with a positive sample bias leads to the formation of depressions at the pulse sites and protrusions at laterally displaced locations along the crystal’s chain direction. Bias-dependent STM imaging and scanning tunneling spectroscopy reveal no measurable change in the surface electronic structure, indicating that the observed height variations originate from structural, rather than electronic, effects. We propose that the electric field drives anisotropic atomic migration within the van der Waals gap, resulting in reversible and directional reconfiguration of subsurface layers. Sequential pulsing further confirms the dynamic nature of this process, allowing local depressions and protrusions to be erased or repositioned. Our findings introduce a mechanism for electric-field-induced subsurface patterning in layered materials, with potential applications in reconfigurable nanoscale devices in van der Waals materials.
期刊介绍:
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.