{"title":"双层石墨烯的本征自旋轨道耦合、Rashba耦合和偏置电压的影响:热电性质","authors":"Shweta Kumari , Ritika , Karuna , Surender Pratap , Pankaj Bhalla","doi":"10.1016/j.ssc.2025.116085","DOIUrl":null,"url":null,"abstract":"<div><div>This paper extends the previous study on the electronic band structure of bilayer graphene (BG) under the influence of intrinsic spin–orbit interaction (ISOI), intralayer Rashba spin–orbit interactions (RSOI), and bias voltage (BV), where eigen values were calculated using the tight-binding (TB) approximation (van Gelderen and Smith, 2010). To better observe the effect of ISOI on band gap, we have increased its intensity beyond typical experimental values. Our results, evaluated at 200 K, 300 K, and 400 K, show that the application of BV and spin–orbit interactions significantly enhances thermoelectric performance, with the maximum electronic figure of merit reaching 0.47 when all interactions are present.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116085"},"PeriodicalIF":2.4000,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of intrinsic spin–orbit coupling, Rashba coupling & bias voltage in case of bilayer graphene: Thermoelectric properties\",\"authors\":\"Shweta Kumari , Ritika , Karuna , Surender Pratap , Pankaj Bhalla\",\"doi\":\"10.1016/j.ssc.2025.116085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper extends the previous study on the electronic band structure of bilayer graphene (BG) under the influence of intrinsic spin–orbit interaction (ISOI), intralayer Rashba spin–orbit interactions (RSOI), and bias voltage (BV), where eigen values were calculated using the tight-binding (TB) approximation (van Gelderen and Smith, 2010). To better observe the effect of ISOI on band gap, we have increased its intensity beyond typical experimental values. Our results, evaluated at 200 K, 300 K, and 400 K, show that the application of BV and spin–orbit interactions significantly enhances thermoelectric performance, with the maximum electronic figure of merit reaching 0.47 when all interactions are present.</div></div>\",\"PeriodicalId\":430,\"journal\":{\"name\":\"Solid State Communications\",\"volume\":\"404 \",\"pages\":\"Article 116085\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2025-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Communications\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038109825002601\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109825002601","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effects of intrinsic spin–orbit coupling, Rashba coupling & bias voltage in case of bilayer graphene: Thermoelectric properties
This paper extends the previous study on the electronic band structure of bilayer graphene (BG) under the influence of intrinsic spin–orbit interaction (ISOI), intralayer Rashba spin–orbit interactions (RSOI), and bias voltage (BV), where eigen values were calculated using the tight-binding (TB) approximation (van Gelderen and Smith, 2010). To better observe the effect of ISOI on band gap, we have increased its intensity beyond typical experimental values. Our results, evaluated at 200 K, 300 K, and 400 K, show that the application of BV and spin–orbit interactions significantly enhances thermoelectric performance, with the maximum electronic figure of merit reaching 0.47 when all interactions are present.
期刊介绍:
Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged.
A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions.
The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.