Ce3Pd20Si6重费米子体系横向磁电阻的逆等吸点

IF 2.4 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
M.A. Anisimov , A.V. Bogach , S.V. Demishev , A.N. Samarin , A.V. Semeno , S.V. Gribanova , S.F. Dunaev , A.V. Gribanov
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引用次数: 0

摘要

重费米子化合物Ce3Pd20Si6 (CPS)主要是由于在局域矩系统中量子临界性的研究而被发现的,因为反铁磁(AFM)相变被磁场完全抑制。在这里,我们报告了Ce3Pd20Si6和它的非磁性对偶物La3Pd20Si6 (LPS)的磁特性[电阻率,横向磁电阻(TMR)]。在温度1.8 ~ 300 K、磁场高达82 kOe的条件下,对高质量的多晶进行了实验。获得的数据使我们首次在Tiso≈8 K处登记了与反演点Tinv≈7.4 K位置非常接近的等同化点(IP),分离了CPS中TMR的正(T>Tinv)和负(T<Tinv)区。两个不同性质的特征温度几乎重合的现象是非常罕见的,可以认为它们是一个温标(逆等渗点)。在我们看来,Tiso/Tinv起着重要的作用,它是在CPS中所谓的第II相的顺磁(PM)附近形成自旋和轨道相关的边界。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inverse isosbestic point in transverse magnetoresistance of Ce3Pd20Si6 heavy fermion system
Heavy fermion compound Ce3Pd20Si6 (CPS) is known mainly due to the study of quantum criticality in a local-moment system, since antiferromagnetic (AFM) phase transition is fully suppressed by magnetic field. Here we report galvanomagnetic properties [electrical resistivity, transverse magnetoresistance (TMR)] of Ce3Pd20Si6 and its non-magnetic counterpart La3Pd20Si6 (LPS). The experiment has been performed on polycrystals of high quality in the temperature range 1.8 300 K in magnetic fields up to 82 kOe. The obtained data allow us for the first time to register the isosbestic point (IP) at Tiso 8 K, which is very close to the position of inversion point Tinv 7.4 K, separating positive (T>Tinv) and negative (T<Tinv) regimes of TMR in CPS. The phenomenon when two characteristic temperatures of different nature practically coincide is very unusual, and they may be considered as one temperature scale (inverse isosbestic point). In our opinion Tiso/Tinv plays significant role, being the boundary of the formation of spin and orbital correlations in paramagnetic (PM) vicinity of so-called phase II in CPS.
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来源期刊
Solid State Communications
Solid State Communications 物理-物理:凝聚态物理
CiteScore
3.40
自引率
4.80%
发文量
287
审稿时长
51 days
期刊介绍: Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.
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