{"title":"纳米TiC增强铝合金增材制造中孔隙率抑制的新见解","authors":"Qinghu Guo , Shiwei Hua , Chen Zhang , Xiaochun Li","doi":"10.1016/j.scriptamat.2025.116927","DOIUrl":null,"url":null,"abstract":"<div><div>Hydrogen-induced porosity remains a critical issue in additive manufacturing of aluminum alloys, undermining structural reliability and performance. Material modification strategies for porosity suppression remain underexplored and require further investigation. This study demonstrates a nanoparticle-enabled material design strategy for intrinsic porosity suppression. Incorporation of TiC nanoparticles reduced porosity by 96.8 % and refined grain size from 108 μm to 12 μm, producing a fully equiaxed and isotropic microstructure. Multiscale analysis and first-principles calculations revealed that site-selective hydrogen adsorption on TiC surfaces serves as the primary suppression mechanism. Two synergistic effects further contribute: (<em>i</em>) interfacial dispersion promotes high-angle boundary formation, increasing hydrogen trap density; and (<em>ii</em>) thermal modulation extends the mushy zone, enhancing hydrogen redistribution and bubble escape. These effects enable in-situ mitigation and spatial homogenization of porosity. This material-driven approach offers a promising path for in-situ porosity mitigation and design of defect-tolerant alloys in additive manufacturing.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"269 ","pages":"Article 116927"},"PeriodicalIF":5.6000,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new insight into porosity suppression in additive manufacturing of TiC nanoparticle-enabled aluminum alloys\",\"authors\":\"Qinghu Guo , Shiwei Hua , Chen Zhang , Xiaochun Li\",\"doi\":\"10.1016/j.scriptamat.2025.116927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Hydrogen-induced porosity remains a critical issue in additive manufacturing of aluminum alloys, undermining structural reliability and performance. Material modification strategies for porosity suppression remain underexplored and require further investigation. This study demonstrates a nanoparticle-enabled material design strategy for intrinsic porosity suppression. Incorporation of TiC nanoparticles reduced porosity by 96.8 % and refined grain size from 108 μm to 12 μm, producing a fully equiaxed and isotropic microstructure. Multiscale analysis and first-principles calculations revealed that site-selective hydrogen adsorption on TiC surfaces serves as the primary suppression mechanism. Two synergistic effects further contribute: (<em>i</em>) interfacial dispersion promotes high-angle boundary formation, increasing hydrogen trap density; and (<em>ii</em>) thermal modulation extends the mushy zone, enhancing hydrogen redistribution and bubble escape. These effects enable in-situ mitigation and spatial homogenization of porosity. This material-driven approach offers a promising path for in-situ porosity mitigation and design of defect-tolerant alloys in additive manufacturing.</div></div>\",\"PeriodicalId\":423,\"journal\":{\"name\":\"Scripta Materialia\",\"volume\":\"269 \",\"pages\":\"Article 116927\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2025-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Scripta Materialia\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1359646225003896\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646225003896","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
A new insight into porosity suppression in additive manufacturing of TiC nanoparticle-enabled aluminum alloys
Hydrogen-induced porosity remains a critical issue in additive manufacturing of aluminum alloys, undermining structural reliability and performance. Material modification strategies for porosity suppression remain underexplored and require further investigation. This study demonstrates a nanoparticle-enabled material design strategy for intrinsic porosity suppression. Incorporation of TiC nanoparticles reduced porosity by 96.8 % and refined grain size from 108 μm to 12 μm, producing a fully equiaxed and isotropic microstructure. Multiscale analysis and first-principles calculations revealed that site-selective hydrogen adsorption on TiC surfaces serves as the primary suppression mechanism. Two synergistic effects further contribute: (i) interfacial dispersion promotes high-angle boundary formation, increasing hydrogen trap density; and (ii) thermal modulation extends the mushy zone, enhancing hydrogen redistribution and bubble escape. These effects enable in-situ mitigation and spatial homogenization of porosity. This material-driven approach offers a promising path for in-situ porosity mitigation and design of defect-tolerant alloys in additive manufacturing.
期刊介绍:
Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.