Enhancement of Thermoelectric Performance in a Cd3P2-Based Systems: Cd3P1.4As0.6

In this work, we report the enhanced thermoelectric performance of Cd₃P_1.4As_0.6 solid solutions achieved through an optimized synthesis procedure. By precisely controlling the phosphorus content to regulate carrier density, we obtained a peak zT of 0.8 at 673 K and an average zT of 0.57 across the entire temperature range, surpassing the performance of the parent Cd₃P₂ compound. Theoretical analysis suggests a further potential for improvement with a projected peak zT of 1.4. Notably, the material exhibits a high power factor exceeding 1.65 mW m^–1 K^–2, reaching the highest reported values for Cd₃P₂-based systems, enabled by high carrier mobility exceeding 1200 cm² V^–1 s^–1 over the entire temperature range. Based on these results, we propose three key strategies for future optimization: (i) balanced thermal processing, (ii) phase purity control, and (iii) tailored microstructure engineering. This study establishes a new performance benchmark and provides a methodological foundation for the development of high-performance Cd₃P₂-based thermoelectric materials.