Ag2S相变过程中的晶体取向记忆

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL
Zhemin Wu, Jun Liu, Lu Chen, Hangsheng Yang* and Yong Wang*, 
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引用次数: 0

摘要

相变控制着材料特性,使其能够应用于医疗设备、数据存储、航空航天部件等领域。然而,在可逆转变过程中,由于各种变体的形成,特别是非金属材料,对相微观结构的理解和控制仍然不完整。利用原位透射电镜(TEM),我们发现单晶Ag2S可以在其相变周期中沿同一方向膨胀和收缩。由于Ag+在高温体心立方(BCC)相中的不均匀分布,这使得它的取向可以被记忆,而β-Ag2S是一种快速离子导体。有趣的是,通过控制Ag+离子在β-Ag2S中的分布,我们可以操纵取向记忆效应,从而控制α-Ag2S相变过程中的取向和形状。这些发现为开发用于多功能电子器件的非常规形状记忆材料提供了可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crystal Orientation Memory during Ag2S Phase Transformation

Phase transformations govern material properties, enabling applications in medical devices, data storage, aerospace components, and more. However, the understanding and controlled manipulation of the phase microstructures during the reversible transformation remains incomplete due to the formation of diverse variants, particularly for nonmetallic materials. Here, using in situ transmission electron microscopy (TEM), we revealed that single-crystalline Ag2S could be controlled to expand and contract along the same direction during its phase transition cycles. This allows its orientation to be memorized, ascribed to the nonuniform distribution of Ag+ in a high-temperature body-centered cubic (BCC) phase of β-Ag2S, which is a fast-ion-conductor. Intriguingly, by controlling the Ag+ ion distribution in β-Ag2S, we are able to manipulate the orientation memory effect and accordingly to control the orientation and shape during phase transformation back to α-Ag2S, a typical semiconductor. These findings open the possibility for the development of unconventional shape memory material for multifunctional electronic devices.

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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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