Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze
{"title":"磁势垒在二硫化钼中的自旋和谷相关隧穿","authors":"Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze","doi":"10.1016/j.commatsci.2025.114130","DOIUrl":null,"url":null,"abstract":"<div><div>We study electron transport in monolayer molybdenum disulfide MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic field strength, and the geometric characteristics of the barrier affect the transmission and conductance. We observe sharp resonant tunneling features emerging from quantum interference effects induced by magnetic confinement. A key outcome of our study is the discovery of distinct resonance patterns in the conduction and valence bands. These patterns are closely related to the intrinsic spin–orbit coupling in MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and the breaking of time-reversal symmetry by the magnetic field. This results in significant spin and valley selectivity in electron transport. We demonstrate that adjusting external parameters precisely controls spin-polarized and valley-polarized currents. We show that a magnetic barrier can control electron spin and valley in MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, making it a promising platform for energy-efficient spintronic and valleytronic devices.</div></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":"259 ","pages":"Article 114130"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spin and valley-dependent tunneling in MoS2 through magnetic barrier\",\"authors\":\"Ahmed Jellal , Nadia Benlakhouy , Pablo Díaz , David Laroze\",\"doi\":\"10.1016/j.commatsci.2025.114130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We study electron transport in monolayer molybdenum disulfide MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic field strength, and the geometric characteristics of the barrier affect the transmission and conductance. We observe sharp resonant tunneling features emerging from quantum interference effects induced by magnetic confinement. A key outcome of our study is the discovery of distinct resonance patterns in the conduction and valence bands. These patterns are closely related to the intrinsic spin–orbit coupling in MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and the breaking of time-reversal symmetry by the magnetic field. This results in significant spin and valley selectivity in electron transport. We demonstrate that adjusting external parameters precisely controls spin-polarized and valley-polarized currents. We show that a magnetic barrier can control electron spin and valley in MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, making it a promising platform for energy-efficient spintronic and valleytronic devices.</div></div>\",\"PeriodicalId\":10650,\"journal\":{\"name\":\"Computational Materials Science\",\"volume\":\"259 \",\"pages\":\"Article 114130\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computational Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927025625004732\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Materials Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927025625004732","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Spin and valley-dependent tunneling in MoS2 through magnetic barrier
We study electron transport in monolayer molybdenum disulfide MoS subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic field strength, and the geometric characteristics of the barrier affect the transmission and conductance. We observe sharp resonant tunneling features emerging from quantum interference effects induced by magnetic confinement. A key outcome of our study is the discovery of distinct resonance patterns in the conduction and valence bands. These patterns are closely related to the intrinsic spin–orbit coupling in MoS and the breaking of time-reversal symmetry by the magnetic field. This results in significant spin and valley selectivity in electron transport. We demonstrate that adjusting external parameters precisely controls spin-polarized and valley-polarized currents. We show that a magnetic barrier can control electron spin and valley in MoS, making it a promising platform for energy-efficient spintronic and valleytronic devices.
期刊介绍:
The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.