Altermagnetism and strain induced altermagnetic transition in Cairo pentagonal monolayer

Altermagnetism, a recently discovered class of magnetic order characterized by vanishing net magnetization and spin-splitting band structures, has garnered significant research attention. In this work, we introduce a novel two-dimensional system that exhibits g-wave altermagnetism and undergoes a strain-induced transition from g-wave to d-wave altermagnetism. This system can be realized in an unconventional monolayer Cairo pentagonal lattice, for which we present a realistic tight-binding model that incorporates both magnetic and non-magnetic sites. Furthermore, we demonstrate that non-trivial band topology can emerge in this system by breaking the symmetry that protects the spin-polarized nodal points. Finally, ab initio calculations on several candidate materials, such as FeS₂ and Nb₂FeB₂, which exhibit symmetry consistent with the proposed tight-binding Hamiltonian, are also presented. These findings open new avenues for exploring spintronic devices based on altermagnetic systems.