等离子体修饰与化学机械抛光相结合的聚晶金刚石原子级平面抛光

IF 3.2 3区工程技术 Q2 ENGINEERING, INDUSTRIAL

Cirp Annals-Manufacturing Technology Pub Date : 2025-01-01 DOI:10.1016/j.cirp.2025.03.024

Song Yuan , Chi Fai Cheung (1) , Alborz Shokrani (2) , Zejin Zhan , Chunjin Wang

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引用次数: 0

摘要

提出了一种基于羟基（•OH）氧化的聚晶金刚石（PCD）等离子体修饰和化学机械抛光（CMP）相结合的原子级平面抛光方法。首先利用he基H2O2等离子体生成的•OH修饰PCD表面，在PCD表面形成由碳氧混合层和富氧层组成的约30 nm厚的均匀氧化层。反应力场分子动力学（ReaxFF MD）模拟解释了等离子体修饰机理。然后使用CMP去除修饰层，得到算术平均高度（Sa）为0.366 nm的原子级平面。

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Atomic-level flat polishing of polycrystalline diamond by combining plasma modification and chemical mechanical polishing

This paper presents an atomic-level flat polishing method based on hydroxyl (•OH) oxidation combining plasma modification and chemical mechanical polishing (CMP) of polycrystalline diamond (PCD). The PCD surface was firstly modified using •OH generated by He-based H₂O₂ plasma leading to the formation of an approximately 30 nm thick uniform oxidation layer on the PCD surface composed of carbon-oxygen mixed layer and oxygen-rich layer. Reactive force field molecular dynamics (ReaxFF MD) simulations explained the plasma modification mechanism. The modified layer was then removed using CMP resulting in an atomic-level flat surface with arithmetical mean height (Sa) of 0.366 nm.

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来源期刊

Cirp Annals-Manufacturing Technology 工程技术-工程：工业

CiteScore

7.50

自引率

9.80%

发文量

137

审稿时长

13.5 months

期刊介绍： CIRP, The International Academy for Production Engineering, was founded in 1951 to promote, by scientific research, the development of all aspects of manufacturing technology covering the optimization, control and management of processes, machines and systems. This biannual ISI cited journal contains approximately 140 refereed technical and keynote papers. Subject areas covered include: Assembly, Cutting, Design, Electro-Physical and Chemical Processes, Forming, Abrasive processes, Surfaces, Machines, Production Systems and Organizations, Precision Engineering and Metrology, Life-Cycle Engineering, Microsystems Technology (MST), Nanotechnology.