氮化镓基TiO2纳米棒异质结的制备及其光电化学性能

IF 2.6 3区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

CrystEngComm Pub Date : 2025-05-23 DOI:10.1039/D5CE00404G

Feifei Wang, Ziwei Yu, Dezhong Cao, Sen Wang, Kunxiao Sun, Baoke Ma, Li Ma, Yuxuan Diwu, Tiantian Luo, Ningning Feng, Xumei Zhao, Mengqi Tian, Shenwei Bai, Dingze Lu, Lianbi Li, Xiaohua Ma and Yue Hao

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引用次数: 0

摘要

采用金属-有机化学气相沉积（MOCVD）技术在c平面蓝宝石上异质外延生长了GaN基铟掺杂TiO2纳米棒异质结（GaN/In-TiO2）。与GaN基未掺杂的TiO2纳米棒异质结（GaN/u-TiO2）相比，GaN/In-TiO2的光致发光（PL）强度降低，光电流密度增加，电荷转移电阻降低，这意味着In的掺杂可以有效抑制光生电子-空穴对的重组，提高电荷的分离和转移效率。重要的是，与GaN/u-TiO2相比，GaN/In-TiO2具有更低的导通电压，更大的H2产量和更高的法拉第效率（FE）。

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Preparation and photoelectrochemical properties of GaN-based TiO2 nanorod heterojunctions

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Preparation and photoelectrochemical properties of GaN-based TiO2 nanorod heterojunctions

GaN-based indium (In)-doped TiO₂ nanorod heterojunctions (GaN/In-TiO₂) are heteroepitaxially grown on C-plane sapphires by metal–organic chemical vapor deposition (MOCVD). Compared with GaN-based undoped TiO₂ nanorod heterojunctions (GaN/u-TiO₂), GaN/In-TiO₂ shows decreased photoluminescence (PL) intensity, increased photocurrent density and reduced charge transfer resistance, meaning that the doping of In can effectively suppress the recombination of photogenerated electron–hole pairs and improve the separation and transfer efficiency of charge. Importantly, GaN/In-TiO₂ exhibits a lower turn-on voltage, larger H₂ production and higher faradaic efficiency (FE) compared with GaN/u-TiO₂.