新kagome材料UV6Sn6的异常磁性

IF 5.4 1区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
S. M. Thomas, C. S. Kengle, W. Simeth, Chan-young Lim, Z. W. Riedel, K. Allen, A. Schmidt, M. Ruf, Seonggeon Gim, J. D. Thompson, F. Ronning, A. O. Scheie, C. Lane, J. D. Denlinger, S. Blanco-Canosa, Jian-Xin Zhu, E. D. Bauer, P. F. S. Rosa
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引用次数: 0

摘要

RV6Sn6族材料(R =稀土)为研究R层和非磁性钒kagome层的局部力矩之间的相互作用提供了一个独特的平台。然而,对锕系元素的研究仍然很少。本文报道了利用自通量技术合成UV6Sn6单晶的方法。物理性质测量显示在TN1 = 29 K和TN2 = 24 K处有两个铀驱动的反铁磁转变,一个复杂的场温相图,以及不寻常的负畴壁磁阻。比热和角分辨光发射光谱测量表明,在费米能级(EF)上,f电子对态密度有适度的增强,而我们的能带结构计算将钒的平面能带置于0.25 eV以上。这些发现指出了扩大铀166家族的材料机会,其目标是通过将5f和3d平坦带调谐到EF来增强相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unusual 5f magnetism in new kagome material UV6Sn6

Unusual 5f magnetism in new kagome material UV6Sn6

Materials in the family RV6Sn6 (R = rare earth) provide a unique platform to investigate the interplay between local moments from R layers and nonmagnetic vanadium kagome layers. Yet, the investigation of actinide members remains scarce. Here we report the synthesis of UV6Sn6 single crystals through the self-flux technique. Physical property measurements reveal two uranium-driven antiferromagnetic transitions at TN1 = 29 K and TN2 = 24 K, a complex field-temperature phase diagram, and unusual negative domain-wall magnetoresistance. Specific heat and angle-resolved photoemission spectroscopy measurements show a moderate f-electron enhancement to the density of states at the Fermi level (EF), whereas our band structure calculations place the vanadium flat bands 0.25 eV above EF. These findings point to a materials opportunity to expand the uranium 166 family with the goal of enhancing correlations by tuning 5f and 3d flat bands to EF.

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来源期刊
npj Quantum Materials
npj Quantum Materials Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
10.60
自引率
3.50%
发文量
107
审稿时长
6 weeks
期刊介绍: npj Quantum Materials is an open access journal that publishes works that significantly advance the understanding of quantum materials, including their fundamental properties, fabrication and applications.
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