{"title":"热稳定无铅Cs2InCuCl6双钙钛矿太阳能电池的设计","authors":"Luong Thien Bao Pham, Naveen Kumar Elumalai, Pranta Barua, Kiran Sreedhar Ram, Hooman Mehdizadeh-Rad, Kannoorpatti Krishnan","doi":"10.1002/adts.202500258","DOIUrl":null,"url":null,"abstract":"In this work, the potential of lead-free double perovskite Cs<sub>2</sub>InCuCl<sub>6</sub> (CICC) is investigated as a solar cell absorber. CICC exhibits a direct bandgap of 1.1 eV and exceptional thermodynamic stability with high decomposition enthalpies (0.4–67.4 meV atom<sup>−1</sup>). Utilizing Solar Cell Capacitance Simulator software (SCAPS)-1D simulations, device architecture, including material selection, layer thicknesses, and doping concentrations, are systematically developed and optimized achieving a high open-circuit voltage (<i>V</i><sub>oc</sub>) of 0.8 V, approaching the Shockley–Queisser limit, an excellent short-circuit current density (<i>J</i><sub>sc</sub>) of 26.20 mA cm<sup>−2</sup>, and a fill factor (FF) of 87.57%. This optimization leads to a record power conversion efficiency of 19.77% with grounds for further enhancement. The key highlight of this study is the incorporation of Mott–Schottky (MS) analysis within the simulation framework, providing unprecedented insights into interfacial charge transport and its impact on device performance. This work paves the way for advanced interface engineering in lead-free perovskite solar cells, offering a roadmap for realizing highly efficient and stable devices.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"16 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Thermodynamically Stable Lead-Free Cs2InCuCl6 Double Perovskite Solar Cells\",\"authors\":\"Luong Thien Bao Pham, Naveen Kumar Elumalai, Pranta Barua, Kiran Sreedhar Ram, Hooman Mehdizadeh-Rad, Kannoorpatti Krishnan\",\"doi\":\"10.1002/adts.202500258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the potential of lead-free double perovskite Cs<sub>2</sub>InCuCl<sub>6</sub> (CICC) is investigated as a solar cell absorber. CICC exhibits a direct bandgap of 1.1 eV and exceptional thermodynamic stability with high decomposition enthalpies (0.4–67.4 meV atom<sup>−1</sup>). Utilizing Solar Cell Capacitance Simulator software (SCAPS)-1D simulations, device architecture, including material selection, layer thicknesses, and doping concentrations, are systematically developed and optimized achieving a high open-circuit voltage (<i>V</i><sub>oc</sub>) of 0.8 V, approaching the Shockley–Queisser limit, an excellent short-circuit current density (<i>J</i><sub>sc</sub>) of 26.20 mA cm<sup>−2</sup>, and a fill factor (FF) of 87.57%. This optimization leads to a record power conversion efficiency of 19.77% with grounds for further enhancement. The key highlight of this study is the incorporation of Mott–Schottky (MS) analysis within the simulation framework, providing unprecedented insights into interfacial charge transport and its impact on device performance. This work paves the way for advanced interface engineering in lead-free perovskite solar cells, offering a roadmap for realizing highly efficient and stable devices.\",\"PeriodicalId\":7219,\"journal\":{\"name\":\"Advanced Theory and Simulations\",\"volume\":\"16 1\",\"pages\":\"\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Theory and Simulations\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1002/adts.202500258\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Theory and Simulations","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1002/adts.202500258","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
摘要
本文研究了无铅双钙钛矿Cs2InCuCl6 (CICC)作为太阳能电池吸收剂的潜力。CICC具有1.1 eV的直接带隙和优异的热力学稳定性,具有较高的分解焓(0.4-67.4 meV原子−1)。利用太阳能电池电容模拟器软件(SCAPS)-1D模拟,系统地开发和优化了器件结构,包括材料选择,层厚度和掺杂浓度,实现了0.8 V的高开路电压(Voc),接近Shockley-Queisser极限,26.20 mA cm−2的优良短路电流密度(Jsc)和87.57%的填充因子(FF)。这一优化导致创纪录的19.77%的功率转换效率,并有进一步提高的基础。本研究的关键亮点是在模拟框架内结合了莫特-肖特基(MS)分析,为界面电荷传输及其对器件性能的影响提供了前所未有的见解。这项工作为无铅钙钛矿太阳能电池的先进界面工程铺平了道路,为实现高效稳定的器件提供了路线图。
Design of Thermodynamically Stable Lead-Free Cs2InCuCl6 Double Perovskite Solar Cells
In this work, the potential of lead-free double perovskite Cs2InCuCl6 (CICC) is investigated as a solar cell absorber. CICC exhibits a direct bandgap of 1.1 eV and exceptional thermodynamic stability with high decomposition enthalpies (0.4–67.4 meV atom−1). Utilizing Solar Cell Capacitance Simulator software (SCAPS)-1D simulations, device architecture, including material selection, layer thicknesses, and doping concentrations, are systematically developed and optimized achieving a high open-circuit voltage (Voc) of 0.8 V, approaching the Shockley–Queisser limit, an excellent short-circuit current density (Jsc) of 26.20 mA cm−2, and a fill factor (FF) of 87.57%. This optimization leads to a record power conversion efficiency of 19.77% with grounds for further enhancement. The key highlight of this study is the incorporation of Mott–Schottky (MS) analysis within the simulation framework, providing unprecedented insights into interfacial charge transport and its impact on device performance. This work paves the way for advanced interface engineering in lead-free perovskite solar cells, offering a roadmap for realizing highly efficient and stable devices.
期刊介绍:
Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including:
materials, chemistry, condensed matter physics
engineering, energy
life science, biology, medicine
atmospheric/environmental science, climate science
planetary science, astronomy, cosmology
method development, numerical methods, statistics