面向智能消费电子器件的一阶NS-SAR⋅ADC与DCMS切换方案

IF 4.3 2区 计算机科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Xin Xin;Yuchen Li;Shimei Zhao;Dingyu Sun;Xingyuan Tong
{"title":"面向智能消费电子器件的一阶NS-SAR⋅ADC与DCMS切换方案","authors":"Xin Xin;Yuchen Li;Shimei Zhao;Dingyu Sun;Xingyuan Tong","doi":"10.1109/TCE.2025.3559687","DOIUrl":null,"url":null,"abstract":"A novel Dual-Capacitor Merge-and-Split (DCMS) capacitor switching scheme is proposed for a Noise-Shaping (NS) Successive-Approximation-Register Analog-to-Digital-Converter (SAR ADC) for smart consumer electronics device. In comparison to the <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula>-based method, the proposed DCMS scheme significantly decreases the average switching energy by 93.7%, while optimizing integral and differential non-linearity by factors of <inline-formula> <tex-math>$\\surd 3$ </tex-math></inline-formula>/<inline-formula> <tex-math>$4\\times $ </tex-math></inline-formula> and <inline-formula> <tex-math>$\\surd 1$ </tex-math></inline-formula>/<inline-formula> <tex-math>$2\\times $ </tex-math></inline-formula>, respectively. By employing only <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula> reference, the DCMS scheme can avoid the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> generation circuit and mismatch between the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$V_{\\mathrm { cm}}$ </tex-math></inline-formula> compared to the tri-level or multiple-level switching schemes. Moreover, it maintains a stable common-mode output voltage, simplifying comparator design by aiding in dynamic offset suppression. A <inline-formula> <tex-math>$1{^{\\text {st}}}$ </tex-math></inline-formula>-order NS-SAR ADC is implemented with the proposed DCMS scheme in a 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process. Measurement results indicate it can achieve a Signal-to-Noise-and-Distortion Ratio (SNDR) of 66.5 dB with a power consumption of <inline-formula> <tex-math>$19.22~\\mu $ </tex-math></inline-formula>W from a 1-V supply, at a sampling rate of 1 MS/s. This yields a Schreier Figure-of-Merit (FoMs) of 161.6 dB and a Walden Figure-of-Merit (FoMw) of 89.28 fJ/conversion-step.","PeriodicalId":13208,"journal":{"name":"IEEE Transactions on Consumer Electronics","volume":"71 1","pages":"1298-1306"},"PeriodicalIF":4.3000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1st-Order NS-SAR⋅ADC With DCMS Switching Scheme for Smart Consumer Electronics Device\",\"authors\":\"Xin Xin;Yuchen Li;Shimei Zhao;Dingyu Sun;Xingyuan Tong\",\"doi\":\"10.1109/TCE.2025.3559687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel Dual-Capacitor Merge-and-Split (DCMS) capacitor switching scheme is proposed for a Noise-Shaping (NS) Successive-Approximation-Register Analog-to-Digital-Converter (SAR ADC) for smart consumer electronics device. In comparison to the <inline-formula> <tex-math>$V_{\\\\mathrm { cm}}$ </tex-math></inline-formula>-based method, the proposed DCMS scheme significantly decreases the average switching energy by 93.7%, while optimizing integral and differential non-linearity by factors of <inline-formula> <tex-math>$\\\\surd 3$ </tex-math></inline-formula>/<inline-formula> <tex-math>$4\\\\times $ </tex-math></inline-formula> and <inline-formula> <tex-math>$\\\\surd 1$ </tex-math></inline-formula>/<inline-formula> <tex-math>$2\\\\times $ </tex-math></inline-formula>, respectively. By employing only <inline-formula> <tex-math>$V_{\\\\mathrm { cm}}$ </tex-math></inline-formula> reference, the DCMS scheme can avoid the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> generation circuit and mismatch between the <inline-formula> <tex-math>$V_{ref}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$V_{\\\\mathrm { cm}}$ </tex-math></inline-formula> compared to the tri-level or multiple-level switching schemes. Moreover, it maintains a stable common-mode output voltage, simplifying comparator design by aiding in dynamic offset suppression. A <inline-formula> <tex-math>$1{^{\\\\text {st}}}$ </tex-math></inline-formula>-order NS-SAR ADC is implemented with the proposed DCMS scheme in a 0.18-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m CMOS process. Measurement results indicate it can achieve a Signal-to-Noise-and-Distortion Ratio (SNDR) of 66.5 dB with a power consumption of <inline-formula> <tex-math>$19.22~\\\\mu $ </tex-math></inline-formula>W from a 1-V supply, at a sampling rate of 1 MS/s. This yields a Schreier Figure-of-Merit (FoMs) of 161.6 dB and a Walden Figure-of-Merit (FoMw) of 89.28 fJ/conversion-step.\",\"PeriodicalId\":13208,\"journal\":{\"name\":\"IEEE Transactions on Consumer Electronics\",\"volume\":\"71 1\",\"pages\":\"1298-1306\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Consumer Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10962186/\",\"RegionNum\":2,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Consumer Electronics","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10962186/","RegionNum":2,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

针对智能消费电子器件的噪声整形(NS)逐次逼近寄存器模数转换器(SAR ADC),提出了一种新的双电容合并分裂(DCMS)电容开关方案。与基于$V_{\mathrm {cm}}$的方法相比,DCMS方案显著降低了平均开关能量93.7%,同时分别以$\surd 3$ / $4 $和$\surd 1$ / $2 $的因子优化了积分和微分非线性。DCMS方案仅采用$V_{\mathrm {cm}}$参考,与三电平或多电平开关方案相比,可以避免$V_{ref}$产生电路和$V_{ref}$与$V_{\mathrm {cm}}$不匹配。此外,它保持稳定的共模输出电压,通过辅助动态失调抑制简化比较器设计。采用所提出的DCMS方案,在0.18- $\mu $ m CMOS工艺中实现了$1{^{\text {st}}}$阶NS-SAR ADC。测量结果表明,在1 v电源下,采样率为1 MS/s,信噪比(SNDR)为66.5 dB,功耗为19.22~\mu $ W。这就产生了161.6 dB的Schreier品质因数(FoMs)和89.28 fJ/转换步长的Walden品质因数(FoMw)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1st-Order NS-SAR⋅ADC With DCMS Switching Scheme for Smart Consumer Electronics Device
A novel Dual-Capacitor Merge-and-Split (DCMS) capacitor switching scheme is proposed for a Noise-Shaping (NS) Successive-Approximation-Register Analog-to-Digital-Converter (SAR ADC) for smart consumer electronics device. In comparison to the $V_{\mathrm { cm}}$ -based method, the proposed DCMS scheme significantly decreases the average switching energy by 93.7%, while optimizing integral and differential non-linearity by factors of $\surd 3$ / $4\times $ and $\surd 1$ / $2\times $ , respectively. By employing only $V_{\mathrm { cm}}$ reference, the DCMS scheme can avoid the $V_{ref}$ generation circuit and mismatch between the $V_{ref}$ and $V_{\mathrm { cm}}$ compared to the tri-level or multiple-level switching schemes. Moreover, it maintains a stable common-mode output voltage, simplifying comparator design by aiding in dynamic offset suppression. A $1{^{\text {st}}}$ -order NS-SAR ADC is implemented with the proposed DCMS scheme in a 0.18- $\mu $ m CMOS process. Measurement results indicate it can achieve a Signal-to-Noise-and-Distortion Ratio (SNDR) of 66.5 dB with a power consumption of $19.22~\mu $ W from a 1-V supply, at a sampling rate of 1 MS/s. This yields a Schreier Figure-of-Merit (FoMs) of 161.6 dB and a Walden Figure-of-Merit (FoMw) of 89.28 fJ/conversion-step.
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来源期刊
CiteScore
7.70
自引率
9.30%
发文量
59
审稿时长
3.3 months
期刊介绍: The main focus for the IEEE Transactions on Consumer Electronics is the engineering and research aspects of the theory, design, construction, manufacture or end use of mass market electronics, systems, software and services for consumers.
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