氧化铟复合材料的结构、介电和磁性

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2025-06-18 DOI:10.1016/j.ssc.2025.116048

Zainab Bashir , Zohra Nazir Kayani , Hina Nazli , Ayesha Akram , Saira Riaz , Shahzad Naseem

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引用次数: 0

摘要

采用电镀方法在氧化铟锡（ITO）表面沉积了新型氧化材料氧化铟、氧化铟镓和氧化铟镓锌。扫描电镜显示，与氧化铟镓膜相比，纯氧化铟膜的晶粒更加突出，分散均匀。x射线衍射图分析证实，In2O3、IGO和IGZO的晶粒尺寸分别为12 nm、32 nm和71 nm。电介质响应表明，纯In2O3的介电常数为4.88，高于其复合材料（IGO为4.15，IGZO为3.10）。复合薄膜的损耗降至0.005，交流电导率降至1.763 × 10−5 S/cm。由于晶界阻力高，Nyquist图呈现一个半圆弧。探索MH回路以确定磁特性。IGZO的高玻尔磁子（1.565 μB）的合理磁化值（16 emu/cm3）表明，合成的复合材料在高频或天线应用、高频晶体管、传感器和低涡流损耗的射频识别（RFID）标签等电子领域具有多种可能的用途。

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Insights into structural, dielectric, and magnetic properties of indium oxide composites

Innovative oxide materials Indium oxide, indium gallium oxide, and indium gallium zinc oxide were deposited on indium tin oxide (ITO) by an electroplating method. SEM showed that grains became more prominent and uniformly dispersed in pure indium oxide film as compared with Indium gallium oxide film. The analysis of X-ray diffraction patterns confirmed the crystallite sizes of In₂O₃, IGO, and IGZO to be 12 nm, 32 nm, and 71 nm, respectively. The dielectric response showed that pure In₂O₃ had a higher dielectric constant 4.88 as compared to its composites (4.15 for IGO and 3.10 for IGZO). For composite films tan loss decreased to 0.005 and AC conductivity decreased to 1.763 × 10⁻⁵ S/cm. The Nyquist plot displayed one semicircle arc owing to high grain boundary resistance. MH loops were explored to determine magnetic characteristics. The reasonable magnetization value (16 emu/cm³) with a high Bohr magneton (1.565 μ_B) of IGZO suggested that synthesized composites had a variety of possible uses in electronics such as high-frequency or antenna applications, high-frequency transistors, sensors, and radio frequency identification (RFID) tags with low eddy current losses.

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.