{"title":"0.45 v电源,22.77 nw无电阻开关电容带隙参考电压","authors":"Hamidreza Rashidian","doi":"10.1016/j.compeleceng.2025.110496","DOIUrl":null,"url":null,"abstract":"<div><div>This research presents a resistor-less bandgap voltage reference circuit utilizing switched-capacitor technology, designed for a wide temperature range, low supply voltage, and minimal power consumption. It features a bootstrapped clock booster that improves boosting efficiency and reduces leakage power, thereby extending the operational temperature range. A PTAT–CTAT voltage generator is introduced to minimize the active area, along with voltage dividers based on high-performance switches to enhance the temperature coefficient. A switched-capacitor circuit is used to generate the reference voltage. The proposed circuit is simulated in a 65 nm standard CMOS technology at a nominal voltage of 0.45 V. The circuit achieves a temperature coefficient of 38 ppm/°C from −50 °C to 150 °C, with a power consumption of 22.77 nW, a line sensitivity of 0.72 %, and a silicon area of 0.009 mm².</div></div>","PeriodicalId":50630,"journal":{"name":"Computers & Electrical Engineering","volume":"126 ","pages":"Article 110496"},"PeriodicalIF":4.0000,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.45-V supply, 22.77-nW resistor-less switched-capacitor bandgap voltage reference\",\"authors\":\"Hamidreza Rashidian\",\"doi\":\"10.1016/j.compeleceng.2025.110496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This research presents a resistor-less bandgap voltage reference circuit utilizing switched-capacitor technology, designed for a wide temperature range, low supply voltage, and minimal power consumption. It features a bootstrapped clock booster that improves boosting efficiency and reduces leakage power, thereby extending the operational temperature range. A PTAT–CTAT voltage generator is introduced to minimize the active area, along with voltage dividers based on high-performance switches to enhance the temperature coefficient. A switched-capacitor circuit is used to generate the reference voltage. The proposed circuit is simulated in a 65 nm standard CMOS technology at a nominal voltage of 0.45 V. The circuit achieves a temperature coefficient of 38 ppm/°C from −50 °C to 150 °C, with a power consumption of 22.77 nW, a line sensitivity of 0.72 %, and a silicon area of 0.009 mm².</div></div>\",\"PeriodicalId\":50630,\"journal\":{\"name\":\"Computers & Electrical Engineering\",\"volume\":\"126 \",\"pages\":\"Article 110496\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computers & Electrical Engineering\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0045790625004392\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computers & Electrical Engineering","FirstCategoryId":"94","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0045790625004392","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 0.45-V supply, 22.77-nW resistor-less switched-capacitor bandgap voltage reference
This research presents a resistor-less bandgap voltage reference circuit utilizing switched-capacitor technology, designed for a wide temperature range, low supply voltage, and minimal power consumption. It features a bootstrapped clock booster that improves boosting efficiency and reduces leakage power, thereby extending the operational temperature range. A PTAT–CTAT voltage generator is introduced to minimize the active area, along with voltage dividers based on high-performance switches to enhance the temperature coefficient. A switched-capacitor circuit is used to generate the reference voltage. The proposed circuit is simulated in a 65 nm standard CMOS technology at a nominal voltage of 0.45 V. The circuit achieves a temperature coefficient of 38 ppm/°C from −50 °C to 150 °C, with a power consumption of 22.77 nW, a line sensitivity of 0.72 %, and a silicon area of 0.009 mm².
期刊介绍:
The impact of computers has nowhere been more revolutionary than in electrical engineering. The design, analysis, and operation of electrical and electronic systems are now dominated by computers, a transformation that has been motivated by the natural ease of interface between computers and electrical systems, and the promise of spectacular improvements in speed and efficiency.
Published since 1973, Computers & Electrical Engineering provides rapid publication of topical research into the integration of computer technology and computational techniques with electrical and electronic systems. The journal publishes papers featuring novel implementations of computers and computational techniques in areas like signal and image processing, high-performance computing, parallel processing, and communications. Special attention will be paid to papers describing innovative architectures, algorithms, and software tools.