Molecular dynamics study of the effects of deposition parameters on Si0.5Ge0.5 film growth on Ge(100) substrate

With the widespread application of SiGe films in the semiconductor field, precisely controlling the growth process to obtain high-quality films has become an important research direction. This study focuses on the growth of Si_0.5Ge_0.5 films on Ge (100) substrates and investigates the effects of different deposition parameters (such as deposition interval, incident energy, incident angle, and substrate off-angle) on film quality. Through molecular dynamics simulations, the effects of these deposition parameters on the crystal structure, dislocation density, and surface roughness of the films are systematically analyzed. The results show that shorter deposition intervals lead to faster atomic deposition, increasing the proportion of disordered atoms; longer deposition intervals effectively reduce the proportion of disordered atoms, but excessively long intervals may increase surface roughness and form island-like structures. Additionally, appropriate incident energy, incident angle, and substrate off-angle can significantly optimize the film quality, with the surface roughness being minimized when the incident energy is 1 eV.