氩离子轰击下多层六方氮化硼薄膜的损伤形成

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2025-05-15 DOI:10.1016/j.scriptamat.2025.116756

M. Seo , L.B. Bayu Aji , S.C. Kim , Y.K. Tzeng , A.A. Baker , F.M. O'Neill , S. Chu , S.O. Kucheyev

{"title":"氩离子轰击下多层六方氮化硼薄膜的损伤形成","authors":"M. Seo , L.B. Bayu Aji , S.C. Kim , Y.K. Tzeng , A.A. Baker , F.M. O'Neill , S. Chu , S.O. Kucheyev","doi":"10.1016/j.scriptamat.2025.116756","DOIUrl":null,"url":null,"abstract":"<div><div>Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"265 ","pages":"Article 116756"},"PeriodicalIF":5.3000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment\",\"authors\":\"M. Seo , L.B. Bayu Aji , S.C. Kim , Y.K. Tzeng , A.A. Baker , F.M. O'Neill , S. Chu , S.O. Kucheyev\",\"doi\":\"10.1016/j.scriptamat.2025.116756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.</div></div>\",\"PeriodicalId\":423,\"journal\":{\"name\":\"Scripta Materialia\",\"volume\":\"265 \",\"pages\":\"Article 116756\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Scripta Materialia\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1359646225002192\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646225002192","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

离子辐照可以改变二维六方氮化硼（2D-hBN）的性能。然而，多层2D-hBN在离子轰击下的行为仍未得到充分研究。在这里，我们系统地研究了在室温下用500 keV的氩离子照射40 nm厚的多层2D-hBN薄膜，每个原子的位移量高达0.64。采用透射电子显微镜、软x射线吸收光谱和拉曼光谱研究了离子辐照效应。结果表明，损伤的单调累积可以用现象零级联重叠模型来描述。与其他iii族氮化物半导体的行为相比，hBN中的辐射损伤受多晶态的影响，包括六方相、立方相和非晶相之间的键构型转变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

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Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.