范德华铁电场效应晶体管的Operando探测载流子动力学

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL
Jinxuan Bai, Yongsheng Wang, Chengzhi Zhang, Jiaqi He, Yajie Yang, Xiaoxian Zhang* and Dawei He*, 
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引用次数: 0

摘要

范德华铁电场效应晶体管(fefet)作为下一代易失性存储器和神经形态器件具有很大的前景。然而,它们的性能受到制造过程中引入的缺陷和二维材料中的界面效应的显著影响。此外,这些微纳米器件中载流子迁移率和扩散长度等关键参数的操作测量仍然具有挑战性。为了解决这些挑战,我们开发了一种电耦合时空分辨泵浦探测装置,可以在工作条件下无损测量fet中的载流子扩散和弛豫过程。在铁电栅极和金属栅极配置下对单个WSe2薄片的空间分辨测量表明,铁电栅极对WSe2的载流子迁移率产生了高效的调制,载流子迁移率/电压调制比高达749.50 cm2/V2s。这明显优于金属栅极实现的调制,金属栅极的调制速率为575.98 cm2/V2s。这一发现为薄膜晶体管的静电掺杂理论模型提供了有力的直接证据。此外,与金属栅极之上的WSe2相比,铁电栅极之上的WSe2载流子复合寿命延长了约10倍,这表明这种神经形态器件的挥发性重量调制机制可能源于载流子寿命的变化。这种operando无损测量技术在推进下一代二维晶体管的开发和优化性能方面具有重要价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Operando Probing Carrier Dynamics in van der Waals Ferroelectric Field-Effect Transistors

Operando Probing Carrier Dynamics in van der Waals Ferroelectric Field-Effect Transistors

van der Waals ferroelectric field-effect transistors (FeFETs) hold great promise as next-generation volatile memory and neuromorphic devices. However, their performance is significantly influenced by defects introduced during the fabrication process and interfacial effects in two-dimensional (2D) materials. Moreover, operando measurement of key parameters such as carrier mobility and diffusion length in these micro- and nanodevices remains challenging. To address these challenges, we have developed an electrically coupled spatiotemporally resolved pump–probe device that enables nondestructive measurement of carrier diffusion and relaxation processes in FeFETs under operating conditions. Spatially resolved measurements on a single WSe2 flake under both ferroelectric and metal gate configurations demonstrate that the ferroelectric gate exerts a highly efficient modulation on the carrier mobility of WSe2, attaining a carrier mobility/voltage modulation ratio of up to 749.50 cm2/V2s. This significantly outperforms the modulation achieved with a metal gate, which stands at 575.98 cm2/V2s. This finding provides strong direct evidence for the electrostatic doping theoretical model in thin-film transistors. Additionally, compared to the WSe2 above the metal gate, the carrier recombination lifetime of WSe2 above the ferroelectric gate is extended by approximately 10 times, suggesting that the volatile weight modulation mechanism in such neuromorphic devices may originate from changes in carrier lifetime. This operando nondestructive measurement technique is poised to deliver a substantial value in advancing the development and optimizing the performance of next-generation two-dimensional transistors.

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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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