探索二维铋-铜杂化双钙钛矿在忆阻器中的应用潜力

IF 6.1 1区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR
Mohamed Saber Lassoued, Kun Wang, FAIZAN AHMAD, Bai Sun, Yan-Zhen Zheng
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引用次数: 0

摘要

杂化双钙钛矿(hdp)由于其在光电子学方面的潜力而引起了人们的广泛关注。然而,对它们在忆阻器器件中的性能的探索尚未触及。在这项研究中,我们引入了一种新的二维HDPs (H2MPP)2BiCuI8,其中H2MPP = 1-甲基哌啶-4-胺,具有结构分层,1.65 eV窄带隙和增强稳定性的特点。更重要的是,该HDPs被用作功能层,用于制备具有Ag/(H2MPP)2BiCuI8/ITO夹层结构的忆阻器器件,该器件具有明显的RS行为。特别是,该器件表现出电导逐渐增加,随后在电压高于约0.37 V时出现明显的转变。基于这一观察,我们揭示了电荷传导机制主要由空间电荷限制电流(SCLC)模型驱动,这为HDPs记忆电阻器中的电荷传输动力学提供了重要的见解。我们相信这项工作将为高性能hdp忆阻器器件的开发提供有用的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring the Potential of Two-Dimensional Bismuth-Copper Hybrid Double Perovskites for Memristor Applications
Hybrid double perovskites (HDPs) have attracted considerable attention due to their potential in optoelectronics. However, the exploration of their properties for memristor devices has not yet been touched. In this study, we introduce a novel two-dimensional HDPs, (H2MPP)2BiCuI8, where H2MPP = 1-methylpiperidinium-4-amine, characterized by its structured layering, narrow bandgap of 1.65 eV, and enhanced stability. More importantly, this HDPs was utilized as a functional layer to prepare a memristor device with an Ag/(H2MPP)2BiCuI8/ITO sandwich structure, which exhibits pronounced RS behavior. In particular, the device exhibits a gradual increase in conductance, followed by a distinct transition at voltages above approximately 0.37 V. Building on this observation, we revealed that the charge conduction mechanism is primarily driven by space charge limited current (SCLC) model, which provides significant insights into charge transport dynamics in HDPs memristors. We believe that this work will provide useful information for the development of high-performance HDPs memristor devices.
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来源期刊
Inorganic Chemistry Frontiers
Inorganic Chemistry Frontiers CHEMISTRY, INORGANIC & NUCLEAR-
CiteScore
10.40
自引率
7.10%
发文量
587
审稿时长
1.2 months
期刊介绍: The international, high quality journal for interdisciplinary research between inorganic chemistry and related subjects
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