用喷涂法表征氧化镁薄膜Al/MgO/p-Si （MIS）二极管的电学和光学特性

IF 2.1 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2025-05-08 DOI:10.1016/j.ssc.2025.115992

Ö. Güllü , M. Türkeri , A. Tataroğlu

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引用次数: 0

摘要

采用喷涂法在玻璃基板上沉积MgO膜，并进行退火，得到纯MgO相。采用XRD、AFM和紫外可见分光光度法对膜进行了表征。XRD结果表明，晶体结构清晰，峰对应于（111）、（200）和（220）取向，晶粒尺寸为35.21 nm。AFM分析显示其表面形貌粗糙，适合传感器和光催化应用。光学特性显示，该材料在可见光区域的透过率为~ 65%，光学带隙为3.93 eV，这使得该材料有望用于光电器件。所提取的Al/MgO/p-Si （MIS）二极管势垒高度和理想因子分别为0.894±0.050 eV和1.454±0.080 eV。这些发现表明，MgO层显著地影响了二极管的电学/光学特性，在电子和光电子应用中提供了改进的性能。

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Electrical and optical characterization of Al/MgO/p-Si (MIS) diode with magnesium oxide thin films by spraying method

MgO films were deposited on a glass substrate using a spray coating method and annealed to obtain pure MgO phase. The films were characterized by XRD, AFM and UV–Vis spectrophotometry. XRD results showed a well-defined crystal structure with peaks corresponding to the (111), (200) and (220) orientations, with a crystallite size of 35.21 nm. AFM analysis revealed a rough surface morphology suitable for sensor and photocatalytic applications. Optical characterization revealed a transmittance (∼65 %) in the visible region and an optical band gap of 3.93 eV, making this material promising for optoelectronic devices. The extracted barrier height and ideality factor for the Al/MgO/p-Si (MIS) diode were 0.894 ± 0.050 eV and 1.454 ± 0.080, respectively. These findings suggest that the MgO layer significantly affects the electrical/optical properties of the diode, offering improved performance in electronic and optoelectronic applications.

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.