GaS的合成、表征及自供电紫外光探测性能

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-04-28 DOI:10.1016/j.physe.2025.116281

Qinxi Cui, Lei Wang, Xiaohong Ji

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引用次数: 0

摘要

随着层数从单层增加到体层，GaS的带隙范围从3.05 eV到2.6 eV，使GaS更适合于蓝紫外光探测应用。本研究在优化的硫化条件下，直接在Ga金属表面获得了单相气体。通过x射线衍射、拉曼光谱和透射电镜分析证实了所制备的气体纳米片的单晶特性。基于GaS纳米片的金属-半导体-金属结构光电探测器在365 nm光照下具有自供电的光电探测性能，响应率为7.1 mA/W，探测率为1 × 109 Jones。该器件的高自供电性能归功于非对称接触电极。此外，该器件在365 nm光照下，响应率高达40.1 mA/W，在3v偏置下的探测率为1 × 1010 Jones。该工作为其他单硫族化合物的气体制备和光电探测器的研制提供了可行的参考。

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Synthesis, characterization, and self-powered UV photodetection properties of GaS

The band gap of GaS ranges from 3.05 eV to 2.6 eV as the number of layers increases from monolayer to bulk, making GaS more suitable for blue-ultraviolet photodetection applications. In this study, mono-phase GaS was obtained directly on the Ga metal surface at optimized vulcanization conditions. The single-crystalline characteristic of the fabricated GaS nanosheets was demonstrated by X-ray diffraction, Raman spectroscopy, and transmittance electron microscope analysis. Metal-semiconductor-metal structured photodetectors based on GaS nanosheets exhibited self-powered photodetection performance with a responsivity of 7.1 mA/W and a detectivity of 1 × 10⁹ Jones under 365 nm illumination. The high self-powered performance of the device is attributed to the asymmetric contact electrodes. In addition, the device showed high photodetection performance with a responsivity as high as 40.1 mA/W and a detectivity of 1 × 10¹⁰ Jones at 3 V bias under a 365 nm light illumination. The work provides a viable reference for preparing GaS and advancing photodetectors for other monochalcogenides.

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures