Enhancing IC substrate manufacturing through differential geometry and lightweight networks for etching defect detection

With the advancement of high-density interconnect technology in semiconductor manufacturing, the precision and complexity of integrated circuit (IC) substrates have significantly increased, placing higher demands on quality control. Efficient and accurate detection of complex etching defects, which often occur during manufacturing, has become critical to preventing potential product defects. A defect detection method is proposed that combines a lightweight network with differential geometry tools to address the issue of etching defects in IC substrates. First, an improved deformable model is used to rapidly extract regular circuit trace contours from complex metallographic images, and morphological processing is applied to enhance the details, achieving precise image segmentation. For under-etching defects between circuit traces, differential processing of the original and segmented images is performed to locate abnormal regions. Subsequently, an optimized lightweight network based on MobileNet, termed OMNet, is designed to achieve the rapid identification of under-etching defects in these regions. For etching defects occurring on circuit traces, the DGEtch method employs a high-precision discrete curvature calculation based on the Frenet frame to evaluate angular discontinuities in contours, enabling accurate detection of etching defects. Experimental results demonstrate that the proposed method achieves an average recall rate of over 95% and maintains a precision above 90%. It exhibits high accuracy and stability in detecting etching defects and consistently outperforms existing models, particularly in handling complex mixed defects. This study provides an effective solution for detecting complicated defects in high-density IC substrate manufacturing.