基塔耶夫自旋液体中来自晶体拓扑缺陷的实空间手性

IF 5.4 1区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Fay Borhani, Arnab Seth, Itamar Kimchi
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引用次数: 0

摘要

我们发现,在基塔耶夫无间隙蜂窝自旋液体模型中,某些晶体拓扑缺陷产生手性和马约拉纳费米子轨道磁化,它们以一种普遍的方式依赖于它们的涌现通量。将5-7位错作为构建块,由五边形和七边形位错组成,我们确定了保持可解性的Kitaev键标签配置。通过计算两种局部标记M(r)的表达式,我们发现5和7晶格缺陷对陈恩数和与M(r)成正比的马约拉纳费米子轨道磁化率产生了实空间贡献。每个5/7缺陷的M(r)贡献的符号,即其qM =±1手性,由缺陷弗兰克角符号F和紧急规范场通量W =±i通过表达式qM =−iFW确定。值得注意的是,虽然晶格曲率和扭转可以与周围的无间隙背景相互作用来改变M(r)的轮廓,但其符号qM是局部确定的,这意味着基塔耶夫自旋液体中的晶体缺陷可以产生强大且可观察的手性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Real-space chirality from crystalline topological defects in the Kitaev spin liquid

Real-space chirality from crystalline topological defects in the Kitaev spin liquid

We show that certain crystalline topological defects in the gapless Kitaev honeycomb spin liquid model generate a chirality and Majorana fermion orbital magnetization that depends in a universal manner on their emergent flux. Focusing on 5–7 dislocations as building blocks, consisting of pentagon and heptagon disclinations, we identify the Kitaev bond label configurations that preserve solvability. By computing two formulations of local markers M(r) we find that the 5 and 7 lattice defects generate a real-space contribution to Chern number and an associated Majorana fermion orbital magnetization proportional to M(r). The sign of the M(r) contribution from each 5/7 defect, i.e. its qM = ± 1 chirality, is determined by the defect Frank angle sign F and emergent gauge field flux W = ± i through the expression qM = − iFW. Remarkably, though lattice curvature and torsion can interplay with the surrounding gapless background to modify the profile of M(r), its sign qM is determined locally, implying that crystalline defects in the Kitaev spin liquid can generate a robust and observable chirality.

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来源期刊
npj Quantum Materials
npj Quantum Materials Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
10.60
自引率
3.50%
发文量
107
审稿时长
6 weeks
期刊介绍: npj Quantum Materials is an open access journal that publishes works that significantly advance the understanding of quantum materials, including their fundamental properties, fabrication and applications.
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