Jaemun Park , Beopgil Cho , Ji Seop Oh , Jungmin Lee , Taeseong Rhee , Donghui Lu , Makoto Hashimoto , Jaewook Kim , Keeseong Park
{"title":"Zr3Mn3Sn4Ga:一种新型异卡戈米双层反铁磁体","authors":"Jaemun Park , Beopgil Cho , Ji Seop Oh , Jungmin Lee , Taeseong Rhee , Donghui Lu , Makoto Hashimoto , Jaewook Kim , Keeseong Park","doi":"10.1016/j.scriptamat.2025.116701","DOIUrl":null,"url":null,"abstract":"<div><div>We report the magnetic and electrical transport properties of single-crystalline Zr<sub>3</sub>Mn<sub>3</sub>Sn<sub>4</sub>Ga, featuring two distinct kagome lattices: a non-magnetic breathing Zr<sub>3</sub>Sn<sub>4</sub> lattice and a magnetic intact Mn<sub>3</sub>Ga lattice. The material undergoes an antiferromagnetic phase transition at <em>T</em><sub>N</sub> = 87 K, with neutron diffraction confirming commensurate ordering characterized by <em>k</em> = (1/3,1/3,0). Transport measurements show metallic behavior, a resistivity anomaly near <em>T</em><sub>N</sub>, and 12 % magnetoresistance at 2 K under 9 T Deviations from the conventional second-order power law, along with negative magnetoresistance and nonlinear Hall slope variations near <em>T</em><sub>N</sub>, suggest strong magneto-electronic coupling. Resonant photoemission spectroscopy identifies Zr 4<em>d</em> and Mn 3<em>d</em> orbitals as dominant contributors to the valence band, linking the material's unique electronic properties to its kagome layers. Zr<sub>3</sub>Mn<sub>3</sub>Sn<sub>4</sub>Ga offers a valuable platform to study interactions between magnetism and topological electronic bands in hetero-kagome systems using the co-existence of magnetic and non-magnetic kagome layers and its tunable electronic structure.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"264 ","pages":"Article 116701"},"PeriodicalIF":5.3000,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Zr3Mn3Sn4Ga: A new hetero-kagome bilayer antiferromagnet\",\"authors\":\"Jaemun Park , Beopgil Cho , Ji Seop Oh , Jungmin Lee , Taeseong Rhee , Donghui Lu , Makoto Hashimoto , Jaewook Kim , Keeseong Park\",\"doi\":\"10.1016/j.scriptamat.2025.116701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We report the magnetic and electrical transport properties of single-crystalline Zr<sub>3</sub>Mn<sub>3</sub>Sn<sub>4</sub>Ga, featuring two distinct kagome lattices: a non-magnetic breathing Zr<sub>3</sub>Sn<sub>4</sub> lattice and a magnetic intact Mn<sub>3</sub>Ga lattice. The material undergoes an antiferromagnetic phase transition at <em>T</em><sub>N</sub> = 87 K, with neutron diffraction confirming commensurate ordering characterized by <em>k</em> = (1/3,1/3,0). Transport measurements show metallic behavior, a resistivity anomaly near <em>T</em><sub>N</sub>, and 12 % magnetoresistance at 2 K under 9 T Deviations from the conventional second-order power law, along with negative magnetoresistance and nonlinear Hall slope variations near <em>T</em><sub>N</sub>, suggest strong magneto-electronic coupling. Resonant photoemission spectroscopy identifies Zr 4<em>d</em> and Mn 3<em>d</em> orbitals as dominant contributors to the valence band, linking the material's unique electronic properties to its kagome layers. Zr<sub>3</sub>Mn<sub>3</sub>Sn<sub>4</sub>Ga offers a valuable platform to study interactions between magnetism and topological electronic bands in hetero-kagome systems using the co-existence of magnetic and non-magnetic kagome layers and its tunable electronic structure.</div></div>\",\"PeriodicalId\":423,\"journal\":{\"name\":\"Scripta Materialia\",\"volume\":\"264 \",\"pages\":\"Article 116701\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Scripta Materialia\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1359646225001642\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646225001642","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Zr3Mn3Sn4Ga: A new hetero-kagome bilayer antiferromagnet
We report the magnetic and electrical transport properties of single-crystalline Zr3Mn3Sn4Ga, featuring two distinct kagome lattices: a non-magnetic breathing Zr3Sn4 lattice and a magnetic intact Mn3Ga lattice. The material undergoes an antiferromagnetic phase transition at TN = 87 K, with neutron diffraction confirming commensurate ordering characterized by k = (1/3,1/3,0). Transport measurements show metallic behavior, a resistivity anomaly near TN, and 12 % magnetoresistance at 2 K under 9 T Deviations from the conventional second-order power law, along with negative magnetoresistance and nonlinear Hall slope variations near TN, suggest strong magneto-electronic coupling. Resonant photoemission spectroscopy identifies Zr 4d and Mn 3d orbitals as dominant contributors to the valence band, linking the material's unique electronic properties to its kagome layers. Zr3Mn3Sn4Ga offers a valuable platform to study interactions between magnetism and topological electronic bands in hetero-kagome systems using the co-existence of magnetic and non-magnetic kagome layers and its tunable electronic structure.
期刊介绍:
Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.