Brittle and Ductile Deformations in Uniaxial Compression of Si Micropillars

This work presents a multiscale study of the uniaxial compression of Si pillars, with diameters ranging from 50 nm to 360 nm, using the Concurrent Atomistic-Continuum (CAC) method. The simulations reproduce the brittle and ductile deformation behaviors of Si pillars observed in experiments. For defect-free Si pillars compressed by a perfectly smooth flat punch with a repulsive force field to reflect an assumed rigid indenter, dislocations are nucleated from the corner of the bottom surface for pillars with diameters of 100 nm and below, while for pillars with diameters of 220 nm and above, dislocations nucleate from the top surface; multiple slip systems are activated in all pillars except for the pillar with a diameter of 50 nm. A strong size effect is thus demonstrated with regard to the nucleation of dislocations. Another key finding is the critical role of defects on the indenter surface. For a perfectly flat indenter, all the defect-free Si pillars with diameters ranging from 50 nm to 360 nm exhibit ductile deformation. By contrast, for an indenter with surface steps, all pillars with diameters of 100 nm and above deform in a brittle manner. These surface steps cause sequential nucleation of dislocations and activation of two slip systems, leading to dislocation intersection and formation of a sessile Lomer lock. Continued pileups of dislocations against the Lomer lock lead to the initiation of a crack at the intersection. The deformation mechanism underlying the crack formation is thus demonstrated.