{"title":"用EFG方法模拟氧化镓的多物理场全过程","authors":"Changshuai Yin, Biao Meng, Songpeng Zhao, Yujie Yan, Qijun Wang, Gai Wu, Kang Liang, Zaoyang Li, Zhitai Jia, Qiangmin Wei, Sheng Liu, Zhaofu Zhang","doi":"10.1111/jace.20421","DOIUrl":null,"url":null,"abstract":"<p>The quality of single-crystal growth for ultra-wide bandgap semiconductor material <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>, a crucial material for the next generation of power electronic devices, currently constrains its broader applications. In this work, the edge-defined film-fed growth (EFG) process of gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) single crystals is simulated and analyzed, the thermal field in the growth furnace is designed, and the appropriate crystal growth conditions are determined through multiphysical field full-process simulation, aiming to optimize the crystal quality. By introducing the volume force and Lorentz force, the solid–liquid phase transition and temperature distribution in the crucible are analyzed comprehensively. The optimal capillary gap width of 0.5 mm during crystal transport is obtained by the two-phase flow method. The structure and thermal field of the meniscus are analyzed in detail using the equivalent circle model, and the optimal range of the meniscus height is determined to be 0.90–2.94 mm. Finally, the crystal quality is compared using the EFG growth approach with and without the optimized process. The results demonstrate a significant improvement in crystal quality following the optimization process informed by our proposed full-process simulation. This research provides pioneering concepts and strategies for the further design and optimization of the EFG system for <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> and related materials.</p>","PeriodicalId":200,"journal":{"name":"Journal of the American Ceramic Society","volume":"108 6","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multiphysical field full-process simulation of gallium oxide with EFG approach\",\"authors\":\"Changshuai Yin, Biao Meng, Songpeng Zhao, Yujie Yan, Qijun Wang, Gai Wu, Kang Liang, Zaoyang Li, Zhitai Jia, Qiangmin Wei, Sheng Liu, Zhaofu Zhang\",\"doi\":\"10.1111/jace.20421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The quality of single-crystal growth for ultra-wide bandgap semiconductor material <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>, a crucial material for the next generation of power electronic devices, currently constrains its broader applications. In this work, the edge-defined film-fed growth (EFG) process of gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) single crystals is simulated and analyzed, the thermal field in the growth furnace is designed, and the appropriate crystal growth conditions are determined through multiphysical field full-process simulation, aiming to optimize the crystal quality. By introducing the volume force and Lorentz force, the solid–liquid phase transition and temperature distribution in the crucible are analyzed comprehensively. The optimal capillary gap width of 0.5 mm during crystal transport is obtained by the two-phase flow method. The structure and thermal field of the meniscus are analyzed in detail using the equivalent circle model, and the optimal range of the meniscus height is determined to be 0.90–2.94 mm. Finally, the crystal quality is compared using the EFG growth approach with and without the optimized process. The results demonstrate a significant improvement in crystal quality following the optimization process informed by our proposed full-process simulation. This research provides pioneering concepts and strategies for the further design and optimization of the EFG system for <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> and related materials.</p>\",\"PeriodicalId\":200,\"journal\":{\"name\":\"Journal of the American Ceramic Society\",\"volume\":\"108 6\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-02-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the American Ceramic Society\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1111/jace.20421\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the American Ceramic Society","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1111/jace.20421","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
Multiphysical field full-process simulation of gallium oxide with EFG approach
The quality of single-crystal growth for ultra-wide bandgap semiconductor material β-Ga2O3, a crucial material for the next generation of power electronic devices, currently constrains its broader applications. In this work, the edge-defined film-fed growth (EFG) process of gallium oxide (β-Ga2O3) single crystals is simulated and analyzed, the thermal field in the growth furnace is designed, and the appropriate crystal growth conditions are determined through multiphysical field full-process simulation, aiming to optimize the crystal quality. By introducing the volume force and Lorentz force, the solid–liquid phase transition and temperature distribution in the crucible are analyzed comprehensively. The optimal capillary gap width of 0.5 mm during crystal transport is obtained by the two-phase flow method. The structure and thermal field of the meniscus are analyzed in detail using the equivalent circle model, and the optimal range of the meniscus height is determined to be 0.90–2.94 mm. Finally, the crystal quality is compared using the EFG growth approach with and without the optimized process. The results demonstrate a significant improvement in crystal quality following the optimization process informed by our proposed full-process simulation. This research provides pioneering concepts and strategies for the further design and optimization of the EFG system for β-Ga2O3 and related materials.
期刊介绍：
The Journal of the American Ceramic Society contains records of original research that provide insight into or describe the science of ceramic and glass materials and composites based on ceramics and glasses. These papers include reports on discovery, characterization, and analysis of new inorganic, non-metallic materials; synthesis methods; phase relationships; processing approaches; microstructure-property relationships; and functionalities. Of great interest are works that support understanding founded on fundamental principles using experimental, theoretical, or computational methods or combinations of those approaches. All the published papers must be of enduring value and relevant to the science of ceramics and glasses or composites based on those materials.
Papers on fundamental ceramic and glass science are welcome including those in the following areas:
Enabling materials for grand challenges[...]
Materials design, selection, synthesis and processing methods[...]
Characterization of compositions, structures, defects, and properties along with new methods [...]
Mechanisms, Theory, Modeling, and Simulation[...]
JACerS accepts submissions of full-length Articles reporting original research, in-depth Feature Articles, Reviews of the state-of-the-art with compelling analysis, and Rapid Communications which are short papers with sufficient novelty or impact to justify swift publication.
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