{"title":"表面活性剂辅助合成具有增强光电和压电性能的半导体杂化镉/氢硒酸盐","authors":"Mohamed Saber Lassoued, Yue-Qiao Hu, FAIZAN AHMAD, Yan-Zhen Zheng","doi":"10.1039/d5qi00444f","DOIUrl":null,"url":null,"abstract":"Multifunctional compounds have attracted significant attention for their wide-ranging applications in advanced technologies. In this study, we synthesized two semiconductor hybrid Cd/Hg-selenidostannates, (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17, employing 1, 3-bis(4-piperidinyl) propane and 1, 5-diamino-2-methylpentane through a surfactant-assisted thermal method. Remarkably, these hybrid chalcogenides are highly soluble in DMF, facilitating the formation of smooth, pinhole-free thin films via spin-coating method. (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17 films exhibit exceptional stability under high humidity and heat, with semiconducting band gaps of 2.12 eV and 2.21 eV, respectively. These band gaps enable strong light absorption and charge carrier generation, which directly contribute to their significant photocurrent responses. Specifically, Photocurrent measurements show Ilight of 1.5 µA cm⁻² and 1 µA cm⁻² at 0.8 V for (H₂BPP)₂CdSn₃Se₉ and (H₂DMP)₂Hg₄Sn₄Se₁₇, notably higher than the 0.30 mA cm² observed for the commercially available SnSe₂ electrode under the same conditions. Building on these interesting electrical properties, (H2BPP)2CdSn3Se9 also showed notable piezoelectric properties, resulting from its unique structural framework that supports both efficient charge transport and mechanical responsiveness. These promising stability and multifunctional characteristics highlight the potential of these hybrid selenidostannates for advanced optoelectronic and piezoelectric applications.","PeriodicalId":79,"journal":{"name":"Inorganic Chemistry Frontiers","volume":"34 1","pages":""},"PeriodicalIF":6.1000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surfactant-Assisted Synthesis of Semiconductor Hybrid Cd/Hg-Selenidostannates with Enhanced Optoelectronic and Piezoelectric Properties\",\"authors\":\"Mohamed Saber Lassoued, Yue-Qiao Hu, FAIZAN AHMAD, Yan-Zhen Zheng\",\"doi\":\"10.1039/d5qi00444f\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multifunctional compounds have attracted significant attention for their wide-ranging applications in advanced technologies. In this study, we synthesized two semiconductor hybrid Cd/Hg-selenidostannates, (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17, employing 1, 3-bis(4-piperidinyl) propane and 1, 5-diamino-2-methylpentane through a surfactant-assisted thermal method. Remarkably, these hybrid chalcogenides are highly soluble in DMF, facilitating the formation of smooth, pinhole-free thin films via spin-coating method. (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17 films exhibit exceptional stability under high humidity and heat, with semiconducting band gaps of 2.12 eV and 2.21 eV, respectively. These band gaps enable strong light absorption and charge carrier generation, which directly contribute to their significant photocurrent responses. Specifically, Photocurrent measurements show Ilight of 1.5 µA cm⁻² and 1 µA cm⁻² at 0.8 V for (H₂BPP)₂CdSn₃Se₉ and (H₂DMP)₂Hg₄Sn₄Se₁₇, notably higher than the 0.30 mA cm² observed for the commercially available SnSe₂ electrode under the same conditions. Building on these interesting electrical properties, (H2BPP)2CdSn3Se9 also showed notable piezoelectric properties, resulting from its unique structural framework that supports both efficient charge transport and mechanical responsiveness. These promising stability and multifunctional characteristics highlight the potential of these hybrid selenidostannates for advanced optoelectronic and piezoelectric applications.\",\"PeriodicalId\":79,\"journal\":{\"name\":\"Inorganic Chemistry Frontiers\",\"volume\":\"34 1\",\"pages\":\"\"},\"PeriodicalIF\":6.1000,\"publicationDate\":\"2025-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Chemistry Frontiers\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1039/d5qi00444f\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry Frontiers","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d5qi00444f","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
摘要
多功能化合物因其在先进技术中的广泛应用而备受关注。本研究以1,3 -二(4-哌替啶基)丙烷和1,5 -二氨基-2-甲基戊烷为原料,采用表面活性剂辅助热法合成了两种半导体杂化镉/氢硒酸盐(H2BPP)2CdSn3Se9和(H2DMP)2Hg4Sn4Se17。值得注意的是,这些杂化硫族化合物在DMF中高度可溶,有利于通过旋涂法形成光滑、无针孔的薄膜。(H2BPP)2CdSn3Se9和(H2DMP)2Hg4Sn4Se17薄膜在高湿和高热条件下表现出优异的稳定性,半导体带隙分别为2.12 eV和2.21 eV。这些带隙使强光吸收和电荷载流子产生,这直接有助于其显著的光电流响应。具体来说,光电流测量显示(H₂BPP)₂CdSn₃Se₉和(H₂DMP)₂Hg₄Sn₄Se₁₇在0.8 V下的光量为1.5µA cm⁻²和1µA cm⁻²,明显高于同样条件下商用SnSe₂电极观察到的0.30 mA cm²。在这些有趣的电学特性的基础上,(H2BPP)2CdSn3Se9也表现出了显著的压电特性,这是由于其独特的结构框架既支持高效的电荷传输,又支持机械响应。这些有希望的稳定性和多功能特性突出了这些杂化硒酸盐在先进光电和压电应用方面的潜力。
Surfactant-Assisted Synthesis of Semiconductor Hybrid Cd/Hg-Selenidostannates with Enhanced Optoelectronic and Piezoelectric Properties
Multifunctional compounds have attracted significant attention for their wide-ranging applications in advanced technologies. In this study, we synthesized two semiconductor hybrid Cd/Hg-selenidostannates, (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17, employing 1, 3-bis(4-piperidinyl) propane and 1, 5-diamino-2-methylpentane through a surfactant-assisted thermal method. Remarkably, these hybrid chalcogenides are highly soluble in DMF, facilitating the formation of smooth, pinhole-free thin films via spin-coating method. (H2BPP)2CdSn3Se9 and (H2DMP)2Hg4Sn4Se17 films exhibit exceptional stability under high humidity and heat, with semiconducting band gaps of 2.12 eV and 2.21 eV, respectively. These band gaps enable strong light absorption and charge carrier generation, which directly contribute to their significant photocurrent responses. Specifically, Photocurrent measurements show Ilight of 1.5 µA cm⁻² and 1 µA cm⁻² at 0.8 V for (H₂BPP)₂CdSn₃Se₉ and (H₂DMP)₂Hg₄Sn₄Se₁₇, notably higher than the 0.30 mA cm² observed for the commercially available SnSe₂ electrode under the same conditions. Building on these interesting electrical properties, (H2BPP)2CdSn3Se9 also showed notable piezoelectric properties, resulting from its unique structural framework that supports both efficient charge transport and mechanical responsiveness. These promising stability and multifunctional characteristics highlight the potential of these hybrid selenidostannates for advanced optoelectronic and piezoelectric applications.