Bi表面活性剂分子束外延生长InGaAs/GaAs量子点阵列的结构

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2025-04-02 DOI:10.3103/S1068335624601031

A. V. Klekovkin, A. A. Rudenko, V. I. Tsekhosh, I. P. Kazakov

{"title":"Bi表面活性剂分子束外延生长InGaAs/GaAs量子点阵列的结构","authors":"A. V. Klekovkin, A. A. Rudenko, V. I. Tsekhosh, I. P. Kazakov","doi":"10.3103/S1068335624601031","DOIUrl":null,"url":null,"abstract":"<p>Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.</p>","PeriodicalId":503,"journal":{"name":"Bulletin of the Lebedev Physics Institute","volume":"52 1","pages":"37 - 41"},"PeriodicalIF":0.6000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant\",\"authors\":\"A. V. Klekovkin, A. A. Rudenko, V. I. Tsekhosh, I. P. Kazakov\",\"doi\":\"10.3103/S1068335624601031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.</p>\",\"PeriodicalId\":503,\"journal\":{\"name\":\"Bulletin of the Lebedev Physics Institute\",\"volume\":\"52 1\",\"pages\":\"37 - 41\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2025-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of the Lebedev Physics Institute\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S1068335624601031\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of the Lebedev Physics Institute","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.3103/S1068335624601031","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

利用原子力和扫描电镜研究了在不同温度下GaAs衬底生长表面Bi蒸气流作用下分子束外延形成InGaAs/GaAs量子点的过程。结果表明，铋作为表面活性剂，使横向相关量子点的出现温度提高了100℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant

查看原文本刊更多论文

Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant

Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.