A. S. Chernukha, G. M. Zirnik, K. V. Matveev, Y. V. Boleiko, T. A. Markin, E. S. Anannikov, A. A. Loshkarev, S. A. Gudkova, D. A. Vinnik
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引用次数: 0
摘要
由于印刷电子和太阳能电池的快速发展,人们对in - ga - zn - o体系的纳米级氧化物半导体的制备产生了兴趣。氧化物纳米材料的合成方法有很多(共沉淀法、溶胶-凝胶法、自燃法等),其中包括一种相对较新的反胶束合成方法。本研究采用自燃和反胶束合成的方法制备了In2O3、Ga2O3、ZnO氧化物。描述了所得氧化物的相组成和形貌。通过x射线衍射(XRD)、扫描电镜、比表面积和制备的粉末悬浮液的动态光散射来确定其颗粒的平均尺寸。结果表明,通过反胶束合成可以得到最细的氧化粉末。
The interest in the preparation of nanoscale oxide semiconductors of the In–Ga–Zn–O system is due to the rapid development of printed electronics and solar cells. There are numerous methods for the synthesis of oxide nanomaterials (coprecipitation, sol-gel, self-combustion, etc), including a relatively novel reverse micelle synthesis. In the present study, In2O3, Ga2O3, ZnO oxides are prepared using self-combustion, and reverse micelle synthesis. The phase composition and morphology of the obtained oxides are described. The average size of their particles is determined from the XRD data, scanning electron microscopy, specific surface area, and dynamic light scattering of the suspensions of prepared powders. It is shown that the finest oxide powders are obtained by the reverse micelle synthesis.
期刊介绍:
Journal is an interdisciplinary publication covering all aspects of structural chemistry, including the theory of molecular structure and chemical bond; the use of physical methods to study the electronic and spatial structure of chemical species; structural features of liquids, solutions, surfaces, supramolecular systems, nano- and solid materials; and the crystal structure of solids.