{"title":"利用 SINDy 神经网络对晶体管建模进行系统识别","authors":"Martin Steiger , Hans-Georg Brachtendorf","doi":"10.1016/j.ifacol.2025.03.073","DOIUrl":null,"url":null,"abstract":"<div><div>Accurate models of semiconductor devices are a key component in modern circuit development. Although parameters of such models are often derived from fundamental physical laws, device geometry or material properties, empirical models from extensive measurements have become increasingly popular. Sparse identification of non-linear dynamics (SINDy) is one approach that emphasizes interpretability. Although several extensions have been developed for this procedure, it still lacks the ability to accommodate function compositions that are very common amongst established semiconductor models. This work introduces an approach fusing the capabilities of neural networks with the core principles of SINDy to address this shortcoming. The results are compared to well-known bipolar transistor models such as Gummel-Poon and indicate promising approximation capabilities.</div></div>","PeriodicalId":37894,"journal":{"name":"IFAC-PapersOnLine","volume":"59 1","pages":"Pages 427-432"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"System Identification with SINDy Neural Networks for Transistor Modeling\",\"authors\":\"Martin Steiger , Hans-Georg Brachtendorf\",\"doi\":\"10.1016/j.ifacol.2025.03.073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Accurate models of semiconductor devices are a key component in modern circuit development. Although parameters of such models are often derived from fundamental physical laws, device geometry or material properties, empirical models from extensive measurements have become increasingly popular. Sparse identification of non-linear dynamics (SINDy) is one approach that emphasizes interpretability. Although several extensions have been developed for this procedure, it still lacks the ability to accommodate function compositions that are very common amongst established semiconductor models. This work introduces an approach fusing the capabilities of neural networks with the core principles of SINDy to address this shortcoming. The results are compared to well-known bipolar transistor models such as Gummel-Poon and indicate promising approximation capabilities.</div></div>\",\"PeriodicalId\":37894,\"journal\":{\"name\":\"IFAC-PapersOnLine\",\"volume\":\"59 1\",\"pages\":\"Pages 427-432\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IFAC-PapersOnLine\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2405896325002903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IFAC-PapersOnLine","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2405896325002903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
System Identification with SINDy Neural Networks for Transistor Modeling
Accurate models of semiconductor devices are a key component in modern circuit development. Although parameters of such models are often derived from fundamental physical laws, device geometry or material properties, empirical models from extensive measurements have become increasingly popular. Sparse identification of non-linear dynamics (SINDy) is one approach that emphasizes interpretability. Although several extensions have been developed for this procedure, it still lacks the ability to accommodate function compositions that are very common amongst established semiconductor models. This work introduces an approach fusing the capabilities of neural networks with the core principles of SINDy to address this shortcoming. The results are compared to well-known bipolar transistor models such as Gummel-Poon and indicate promising approximation capabilities.
期刊介绍:
All papers from IFAC meetings are published, in partnership with Elsevier, the IFAC Publisher, in theIFAC-PapersOnLine proceedings series hosted at the ScienceDirect web service. This series includes papers previously published in the IFAC website.The main features of the IFAC-PapersOnLine series are: -Online archive including papers from IFAC Symposia, Congresses, Conferences, and most Workshops. -All papers accepted at the meeting are published in PDF format - searchable and citable. -All papers published on the web site can be cited using the IFAC PapersOnLine ISSN and the individual paper DOI (Digital Object Identifier). The site is Open Access in nature - no charge is made to individuals for reading or downloading. Copyright of all papers belongs to IFAC and must be referenced if derivative journal papers are produced from the conference papers. All papers published in IFAC-PapersOnLine have undergone a peer review selection process according to the IFAC rules.