{"title":"组成对（TlGaSe2）1 - x(TlGaS2)x（0≤x≤1）固溶体中电荷输运的影响","authors":"S. M. Asadov, S. N. Mustafaeva","doi":"10.1134/S0020168525700098","DOIUrl":null,"url":null,"abstract":"<p>We have synthesized polycrystalline (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> (<i>x</i> = 0–1) solid solutions and used them to grow single crystals by the Bridgman–Stockbarger method. The dielectric properties of single-crystal samples of the solid solutions have been studied in ac electric fields in the frequency range <i>f</i> = 5 × 10<sup>4</sup> to 3.5 × 10<sup>7</sup> Hz. We have demonstrated relaxation behavior of the complex dielectric permittivity of the (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> solid solutions, found out the nature of the dielectric loss in them, and identified the hopping charge transport mechanism in them. With increasing <i>x</i>, the electrical conductivity of the (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> crystals and the average distance and time of carrier hopping between localized states in the band gap of the crystals decrease, whereas the scatter in the energy of Fermi level localized states and their density increase.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"60 11","pages":"1283 - 1292"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Composition on Charge Transport in (TlGaSe2)1–x(TlGaS2)x (0 ≤ x ≤ 1) Solid Solutions\",\"authors\":\"S. M. Asadov, S. N. Mustafaeva\",\"doi\":\"10.1134/S0020168525700098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>We have synthesized polycrystalline (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> (<i>x</i> = 0–1) solid solutions and used them to grow single crystals by the Bridgman–Stockbarger method. The dielectric properties of single-crystal samples of the solid solutions have been studied in ac electric fields in the frequency range <i>f</i> = 5 × 10<sup>4</sup> to 3.5 × 10<sup>7</sup> Hz. We have demonstrated relaxation behavior of the complex dielectric permittivity of the (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> solid solutions, found out the nature of the dielectric loss in them, and identified the hopping charge transport mechanism in them. With increasing <i>x</i>, the electrical conductivity of the (TlGaSe<sub>2</sub>)<sub>1–<i>x</i></sub>(TlGaS<sub>2</sub>)<sub><i>x</i></sub> crystals and the average distance and time of carrier hopping between localized states in the band gap of the crystals decrease, whereas the scatter in the energy of Fermi level localized states and their density increase.</p>\",\"PeriodicalId\":585,\"journal\":{\"name\":\"Inorganic Materials\",\"volume\":\"60 11\",\"pages\":\"1283 - 1292\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S0020168525700098\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S0020168525700098","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of Composition on Charge Transport in (TlGaSe2)1–x(TlGaS2)x (0 ≤ x ≤ 1) Solid Solutions
We have synthesized polycrystalline (TlGaSe2)1–x(TlGaS2)x (x = 0–1) solid solutions and used them to grow single crystals by the Bridgman–Stockbarger method. The dielectric properties of single-crystal samples of the solid solutions have been studied in ac electric fields in the frequency range f = 5 × 104 to 3.5 × 107 Hz. We have demonstrated relaxation behavior of the complex dielectric permittivity of the (TlGaSe2)1–x(TlGaS2)x solid solutions, found out the nature of the dielectric loss in them, and identified the hopping charge transport mechanism in them. With increasing x, the electrical conductivity of the (TlGaSe2)1–x(TlGaS2)x crystals and the average distance and time of carrier hopping between localized states in the band gap of the crystals decrease, whereas the scatter in the energy of Fermi level localized states and their density increase.
期刊介绍：
Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.
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