驱动极性半导体和金属的双孤对电子

IF 3.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Lulu Zhao , YiXuan Li , RuiFeng Zhang, Hu Zhang
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引用次数: 0

摘要

孤对电子对于理解铁电体(如PbTiO3和BiFeO3)的极化起源具有重要意义。本文研究了I-IV-V化合物中双孤对电子驱动极化的机理。我们的理论结果表明,这些化合物可以结晶成具有P63mc对称的三极性结构。我们发现174种极性半导体和109种潜在极性金属同时表现出导电性和自发极化。特别值得注意的是精选极性半导体,由于其固有的自发极化和最佳的带隙特性,显示出有希望的光催化潜力。该研究进一步揭示了这些材料中出现的大块Rashba分裂现象、Dirac点特征和拓扑绝缘状态。这些不同的物理表现源于含有双孤对电子的I-IV-V化合物的对称破缺机制,这使得独特的电子结构修饰成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Double lone pair electrons driving polar semiconductors and metals

Double lone pair electrons driving polar semiconductors and metals
The lone pair electrons are important to understand the origin of polarization in ferroelectrics such as PbTiO3 and BiFeO3. Here we investigate the mechanism of polarization driven by double lone pair electrons in I-IV-V compounds. Our theoretical results indicate that these compounds can crystallize in three polar structures with P63mc symmetry. We identify 174 polar semiconductors and 109 potential polar metals that simultaneously exhibit electrical conductivity and spontaneous polarization. Particularly noteworthy are select polar semiconductors demonstrating promising photocatalytic potential, attributable to their intrinsic spontaneous polarization and optimal band gap characteristics. The study further reveals the emergence of bulk Rashba splitting phenomena, Dirac point features, and topological insulating states within these materials. These diverse physical manifestations stem from symmetry-breaking mechanisms in I-IV-V compounds containing double lone-pair electrons, which enable unique electronic structure modifications.
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来源期刊
Computational Materials Science
Computational Materials Science 工程技术-材料科学:综合
CiteScore
6.50
自引率
6.10%
发文量
665
审稿时长
26 days
期刊介绍: The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.
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