{"title":"γ辐照对掺杂铅受体杂质的Bi0.85Sb0.15固溶挤压样品电性能的影响","authors":"M. M. Tagiyev, I. A. Abdullayeva, G. D. Abdinova","doi":"10.1134/S0020168524701024","DOIUrl":null,"url":null,"abstract":"<p>The effect of gamma irradiation on the electrical properties of extruded Bi<sub>0.85</sub>Sb<sub>0.15</sub> solid solution samples doped with 0.001 to 0.05 at % Pb has been studied in the range ~77–300 K. The results suggest that irradiation of the undoped material to a gamma dose of ~1 Mrad produces donor defects and leads to an increase in carrier concentration <i>n</i> and electrical conductivity σ. The radiation-induced donor defects in the material containing 0.001 at % Pb compensate Pb acceptor centers, reducing σ. In the materials containing ≥0.005 at % Pb, conduction electrons are compensated by Pb acceptor centers, so electrons generated by gamma irradiation lead to an increase in σ. A good correlation is observed between the dependences of electrical conductivity σ, thermoelectric power α and Hall coefficient <i>R</i><sub>H</sub> on Pb content and gamma irradiation dose.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"60 7","pages":"822 - 827"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Gamma Irradiation on the Electrical Properties of Extruded Bi0.85Sb0.15 Solid Solution Samples Doped with Pb Acceptor Impurities\",\"authors\":\"M. M. Tagiyev, I. A. Abdullayeva, G. D. Abdinova\",\"doi\":\"10.1134/S0020168524701024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The effect of gamma irradiation on the electrical properties of extruded Bi<sub>0.85</sub>Sb<sub>0.15</sub> solid solution samples doped with 0.001 to 0.05 at % Pb has been studied in the range ~77–300 K. The results suggest that irradiation of the undoped material to a gamma dose of ~1 Mrad produces donor defects and leads to an increase in carrier concentration <i>n</i> and electrical conductivity σ. The radiation-induced donor defects in the material containing 0.001 at % Pb compensate Pb acceptor centers, reducing σ. In the materials containing ≥0.005 at % Pb, conduction electrons are compensated by Pb acceptor centers, so electrons generated by gamma irradiation lead to an increase in σ. A good correlation is observed between the dependences of electrical conductivity σ, thermoelectric power α and Hall coefficient <i>R</i><sub>H</sub> on Pb content and gamma irradiation dose.</p>\",\"PeriodicalId\":585,\"journal\":{\"name\":\"Inorganic Materials\",\"volume\":\"60 7\",\"pages\":\"822 - 827\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-03-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S0020168524701024\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S0020168524701024","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of Gamma Irradiation on the Electrical Properties of Extruded Bi0.85Sb0.15 Solid Solution Samples Doped with Pb Acceptor Impurities
The effect of gamma irradiation on the electrical properties of extruded Bi0.85Sb0.15 solid solution samples doped with 0.001 to 0.05 at % Pb has been studied in the range ~77–300 K. The results suggest that irradiation of the undoped material to a gamma dose of ~1 Mrad produces donor defects and leads to an increase in carrier concentration n and electrical conductivity σ. The radiation-induced donor defects in the material containing 0.001 at % Pb compensate Pb acceptor centers, reducing σ. In the materials containing ≥0.005 at % Pb, conduction electrons are compensated by Pb acceptor centers, so electrons generated by gamma irradiation lead to an increase in σ. A good correlation is observed between the dependences of electrical conductivity σ, thermoelectric power α and Hall coefficient RH on Pb content and gamma irradiation dose.
期刊介绍：
Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.
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