{"title":"温度简并对芯片半导体等离子体双流不稳定性的影响","authors":"Zulfiqar Ahmad, A. Mushtaq","doi":"10.1007/s13538-025-01739-4","DOIUrl":null,"url":null,"abstract":"<div><p>The dynamics of electron–hole counter-streaming quantum semiconductor plasmas within an electrostatic framework is investigated by employing the quantum hydrodynamics (QHD) model, considering the effects of Bohm potential, exchange-correlation potential, and arbitrary degenerate pressure. The analysis covers both nearly degenerate and nearly non-degenerate scenarios, addressing distinct time-scale instabilities. Numerical investigations are carried out using typical parameter values for <i>InP</i> and <i>GaN</i> semiconductors to analyze the real frequency and growth rate of the two-stream instabilities. In both regimes, an inverse relationship is observed between species density and instability phase velocity. The system’s instability grows with increasing electron streaming velocity and shrinks with increasing hole streaming velocity. In nearly degenerate plasmas, growth rates are lower when species temperatures are equal compared to differing temperature (<span>\\(T_{e}>T_{h}\\)</span>) and higher compared to <span>\\(T_{e}<T_{h}\\)</span>. In nearly non-degenerate cases, temperature variation has a negligible effect on the growth rate, underscoring the dominance of other quantum effects. In both, the nearly degenerate and nearly non-degenerate regimes, the exchange-correlation potential enhances plasma instability, while tunneling recoil and degeneracy pressure significantly reduce instability at larger wave numbers. This comprehensive investigation provides valuable insights into the quantum behavior of semiconductor plasmas, informing applications in electronic devices and semiconductor physics.</p></div>","PeriodicalId":499,"journal":{"name":"Brazilian Journal of Physics","volume":"55 3","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Temperature Degeneracy on Two-Stream Instability in Chip-Based Semiconductor Plasmas\",\"authors\":\"Zulfiqar Ahmad, A. 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In nearly degenerate plasmas, growth rates are lower when species temperatures are equal compared to differing temperature (<span>\\\\(T_{e}>T_{h}\\\\)</span>) and higher compared to <span>\\\\(T_{e}<T_{h}\\\\)</span>. In nearly non-degenerate cases, temperature variation has a negligible effect on the growth rate, underscoring the dominance of other quantum effects. In both, the nearly degenerate and nearly non-degenerate regimes, the exchange-correlation potential enhances plasma instability, while tunneling recoil and degeneracy pressure significantly reduce instability at larger wave numbers. This comprehensive investigation provides valuable insights into the quantum behavior of semiconductor plasmas, informing applications in electronic devices and semiconductor physics.</p></div>\",\"PeriodicalId\":499,\"journal\":{\"name\":\"Brazilian Journal of Physics\",\"volume\":\"55 3\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2025-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Brazilian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13538-025-01739-4\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Brazilian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s13538-025-01739-4","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
通过采用量子流体力学(QHD)模型,考虑博姆电势、交换相关电势和任意退化压力的影响,研究了静电框架内电子-空穴反向流量子半导体等离子体的动力学。分析涵盖了近乎退化和近乎非退化两种情况,解决了不同时间尺度的不稳定性问题。利用 InP 和 GaN 半导体的典型参数值进行了数值研究,以分析双流不稳定性的实际频率和增长率。在这两种情况下,物种密度与不稳定相位速度之间都存在反比关系。系统的不稳定性随着电子流速度的增加而增加,随着空穴流速度的增加而缩小。在近乎退化的等离子体中,当物种温度等于不同温度(\(T_{e}>T_{h}\))时,增长率较低;而当物种温度高于\(T_{e}<T_{h}\)时,增长率较高。在几乎不退化的情况下,温度变化对生长率的影响可以忽略不计,这凸显了其他量子效应的主导地位。在近乎退化和近乎非退化两种情况下,交换相关势都会增强等离子体的不稳定性,而隧道反冲和退化压力则会显著降低较大波数下的不稳定性。这项全面的研究为半导体等离子体的量子行为提供了宝贵的见解,为电子设备和半导体物理学的应用提供了信息。
Effect of Temperature Degeneracy on Two-Stream Instability in Chip-Based Semiconductor Plasmas
The dynamics of electron–hole counter-streaming quantum semiconductor plasmas within an electrostatic framework is investigated by employing the quantum hydrodynamics (QHD) model, considering the effects of Bohm potential, exchange-correlation potential, and arbitrary degenerate pressure. The analysis covers both nearly degenerate and nearly non-degenerate scenarios, addressing distinct time-scale instabilities. Numerical investigations are carried out using typical parameter values for InP and GaN semiconductors to analyze the real frequency and growth rate of the two-stream instabilities. In both regimes, an inverse relationship is observed between species density and instability phase velocity. The system’s instability grows with increasing electron streaming velocity and shrinks with increasing hole streaming velocity. In nearly degenerate plasmas, growth rates are lower when species temperatures are equal compared to differing temperature (\(T_{e}>T_{h}\)) and higher compared to \(T_{e}<T_{h}\). In nearly non-degenerate cases, temperature variation has a negligible effect on the growth rate, underscoring the dominance of other quantum effects. In both, the nearly degenerate and nearly non-degenerate regimes, the exchange-correlation potential enhances plasma instability, while tunneling recoil and degeneracy pressure significantly reduce instability at larger wave numbers. This comprehensive investigation provides valuable insights into the quantum behavior of semiconductor plasmas, informing applications in electronic devices and semiconductor physics.
期刊介绍:
The Brazilian Journal of Physics is a peer-reviewed international journal published by the Brazilian Physical Society (SBF). The journal publishes new and original research results from all areas of physics, obtained in Brazil and from anywhere else in the world. Contents include theoretical, practical and experimental papers as well as high-quality review papers. Submissions should follow the generally accepted structure for journal articles with basic elements: title, abstract, introduction, results, conclusions, and references.