Development of Inductive Energy Storage Pulsed Power Generator Using GaN Power Semiconductor Switches

Characterizations of pulsed power output for pulsed power generator using GaN FET have been evaluated and compared with using SiC-MOS FET. The fast rise/fall time of output voltage without the dependance on the dummy load has attractive feathers. However, the surge voltage between drain and source terminals, exceeding the maximum rating occurred due to the fast turn-off speed feathers of Gallium nitride (GaN) FET, which has limited the power capability. The inductive energy storage pulsed power generator using GaN FETs as opening switches has developed, and the output obtains a maximum voltage of ∼900 V with rise/fall time of <20 ns. The fast current interruption characteristics by the turn-off of GaN FET lead to high voltage-pulsed output.